Growth of TMD Heterostructures on GaAs (111) Explored

17-Jul-2014

The Notre Dame team has explored growth of TMD heterostructures on GaAs (111). The Tin Selenide and Molybdenum Telluride growth conditions resulting in different phases using transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) have been explored. The
materials may be useful for tunnel FET applications.

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