Overview

The Logic and Memory Devices (LMD) Program is focused on answering the questions about the future of transistor technology. Furthermore, this program explores augmenting the advanced CMOS technology with emerging alternative concepts such as multiferroics, spintronics, photonics, and their 3D monolithic integration.

Research Focus

Topics of interest, aiming at evolutionary and revolutionary scientific advancement, include all aspects of logic and memory devices: device design, process technology, characterization, numerical simulation, compact modeling, and reliability. Additional focus is on monolithic heterogeneous 3D integration that will enable greater functionality per footprint including integration of logic and memory as well as mixed-signal circuits, photonics and spintronics, therefore it has the potential to become a truly multi-functional platform. The research is organized into the following two sub-thrust areas.

Logic Devices and Modeling

The focus is on tasks that address advanced device structures to extend CMOS technology to and beyond the 5-nm technology node. Topics of interest include: (1) alternate channel materials and gate dielectrics for MOSFETs, (2) reduction of device parasitics such as series resistance, (3) emerging device concepts beyond MOSFETs, (4) predictive numerical simulation to provide physical insights into new materials, devices, and physical phenomena, and (5) compact modeling.

Memory Devices and Modeling

This focus explores new material and device ideas and technologies for nonvolatile memory cells, to keep pace in density scaling. Main focus is on two-terminal, non-charge-storage type of cells, with attention for multi-bit performance. Efficient selection device is also needed for cross-point array. Revolutionary solutions for DRAM and SRAM replacements are also sought after. Numerical simulation and compact modeling for memory devices are also of interest.