Application-specific THz Transistors develops high-power GaN- and InP- based power transistors for increased transmitter power and improved efficiency, and InP-based low-noise transistors for improved receiver sensitivity, both increasing range and both reducing DC power consumption. Furthermore, work in this theme develops GaN and InP transistors with bandwidth sufficient for efficient low-noise, high-power, efficient operation at 340, 650, and 1080GHz.
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Updated: 19-Apr-2024, 12:05 a.m. ET
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