Durable, Energy-Efficient, Pausable Processing in Polymorphic Memories (DEEP3M)

Huili Xing, Cornell

The DEEP3M Center will focus on new materials that enable tuning of a semiconductor channel resistance by controlled switching of the magnetic order in the channel gate stack. We leverage these new materials to build two novel devices: (1) spin-orbit-torque field-effect transistors (SOTFETs) that are essentially non-volatile pass transistors with very low read/write energy/delay; and (2) multi-function devices that embed XOR logic within SOTFETs (XSOTFETs). We leverage these SOTFET and XSOTFET devices to build new non-volatile polymorphic memories (SF-PolyMem) that are capable of being reused as a random access memory (RAM), content addressable memory (CAM), ternary CAM (TCAM), lookup table (LUT), and programmable logic array (PLA). Finally, we propose a radically new PIM architecture and associated computing paradigm based on this exciting new technology. We exploit (1) the non-volatile nature of the memory architecture to achieve extreme energy efficiency, and (2) the polymorphic nature of the memory architecture to enable significant improvements in performance for a broad class of challenging “big-data” applications which use numerical methods, searching, graph algorithms, compression, encryption, etc.

DEEP3M Metrics

  1. Since Inception

    4 Projects
    1 Universities
    14 Research Scholars
    9 Faculty Researchers
    14 Liaisons
    52 Research Data
    2 Patents Granted
Updated: 18-Jun-2024, 12:05 a.m. ET

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