The theme vision is to demonstrate novel device concepts that provide high performance and new functionalities beyond conventional CMOS and state-of-the-art high power electronics by utilizing unique properties of selected 2D materials, i.e. MoTe2, MoS2, NbS2, WSe2, that are non-existent in traditional 3D materials and the ability to grow these materials independent of substrate constraints, as typically associated with epitaxial growth. The goals include: (1) Demonstrate nonvolatile memory devices by integrating 2D materials with selector properties and RRAM behavior in crossbar vertical structures with a focus on novel phase change properties of TMDs; (2) Demonstrate vertically stacked multichannel TMD FETs for logic and high power device applications as well as integrated TMD/FinFET hybrids; (3) Explore novel metallic TMDs as ultra-thin diffusion barriers and evaluate the electrical performance of Cu/metallic-TMD hybrids; (4) Demonstrate gatetunable giant spin Hall effect in TMDs with out-of-plane magnetization for low current spin torque switching; (5) Demonstrate spin-to-charge conversion in 2D material stacks.
Current5 Research Tasks4 Universities13 Students6 Faculty Researchers31 Liaison Personnel
This Year1 Research Publications1 Patent Applications
Last Year25 Research Publications1 Patent Applications
Since Inception5 Research Tasks4 Universities17 Students6 Faculty Researchers38 Liaison Personnel57 Research Publications2 Patent Applications