NEWLIMITS-T2
2D Materials, Devices, and Interconnect Technologies

The theme vision is to demonstrate novel device concepts that provide high performance and new functionalities beyond conventional CMOS and state-of-the-art high power electronics by utilizing unique properties of selected 2D materials, i.e. MoTe2, MoS2, NbS2, WSe2, that are non-existent in traditional 3D materials and the ability to grow these materials independent of substrate constraints, as typically associated with epitaxial growth. The goals include: (1) Demonstrate nonvolatile memory devices by integrating 2D materials with selector properties and RRAM behavior in crossbar vertical structures with a focus on novel phase change properties of TMDs; (2) Demonstrate vertically stacked multichannel TMD FETs for logic and high power device applications as well as integrated TMD/FinFET hybrids; (3) Explore novel metallic TMDs as ultra-thin diffusion barriers and evaluate the electrical performance of Cu/metallic-TMD hybrids; (4) Demonstrate gatetunable giant spin Hall effect in TMDs with out-of-plane magnetization for low current spin torque switching; (5) Demonstrate spin-to-charge conversion in 2D material stacks.

NEWLIMITS-T2 Metrics

  1. Current

    5 Research Tasks
    4 Universities
    14 Students
    6 Faculty Researchers
    20 Liaison Personnel
  2. This Year

    5 Task Starts
    29 Research Publications
Updated: 19-Nov-2018, 12:05 a.m. ET

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