The theme vision is to demonstrate novel device concepts that provide high performance and new functionalities beyond conventional CMOS and state-of-the-art high power electronics by utilizing unique properties of selected 2D materials, i.e. MoTe2, MoS2, NbS2, WSe2, that are non-existent in traditional 3D materials and the ability to grow these materials independent of substrate constraints, as typically associated with epitaxial growth. The goals include: (1) Demonstrate nonvolatile memory devices by integrating 2D materials with selector properties and RRAM behavior in crossbar vertical structures with a focus on novel phase change properties of TMDs; (2) Demonstrate vertically stacked multichannel TMD FETs for logic and high power device applications as well as integrated TMD/FinFET hybrids; (3) Explore novel metallic TMDs as ultra-thin diffusion barriers and evaluate the electrical performance of Cu/metallic-TMD hybrids; (4) Demonstrate gatetunable giant spin Hall effect in TMDs with out-of-plane magnetization for low current spin torque switching; (5) Demonstrate spin-to-charge conversion in 2D material stacks.
Current5 Research Tasks5 Universities9 Students8 Faculty Researchers34 Liaison Personnel
This Year5 Task Starts2 Research Publications
Last Year33 Research Publications1 Patent Applications
Since Inception10 Research Tasks5 Universities21 Students9 Faculty Researchers48 Liaison Personnel91 Research Publications2 Patent Applications