NEWLIMITS-T3
Advanced Manufacturing & Processing of 2D Materials, Novel Semiconductors & Topological Insulators

The theme vision is to establish large-scale synthesis of 2D transition metal dichalcogenides (TMD) compatible with back-end-of-the-line (BEOL) technologies for novel device applications, and low temperature epitaxial growth of traditional semiconductors and novel materials using selective deposition and processing. The goals include: 1) Demonstrate scalable metal-organic chemical vapor deposition of NbS2 and MoTe2 for utilization in memory and interconnect device architectures; 2) Investigate TMD phase formation as a function of synthetic chemistries and understand the impact on the fundamental structural, chemical and optical properties; 3) Investigate selective growth of phase engineered TMDs through functionalization of substrates and nano-textured surfaces. The proposed goals build off of our groups successful development of large area scalable synthesis, characterization, and integration of two-dimensional materials; 4) Develop methods for selective processing of functional materials for next generation devices; and 5) BEOL material integration processes focusing on low temperature growth of traditional semiconductors and novel materials including topological insulators.

 

 

NEWLIMITS-T3 Metrics

  1. Current

    5 Research Tasks
    4 Universities
    9 Students
    7 Faculty Researchers
    14 Liaison Personnel
  2. This Year

    5 Task Starts
    12 Research Publications
Updated: 16-Nov-2018, 12:05 a.m. ET

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