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GRC Science Area
MBP – Materials & Bulk Processes Sciences
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- 1:
Dynamic Threshold Voltage Mosfet Having Gate to Body Connection...
- Dynamic Threshold Voltage Mosfet Having Gate to Body Connection for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5559368 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0004/
Modified: 1996-09-24 - 22KB
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- 2:
Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET...
- Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5780899 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0016/
Modified: 1998-07-14 - 22KB
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- 3:
Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
- Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
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- 4:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 5:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 6:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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- 7:
Method of Fabricating a Self-Aligned High Speed MOSFET Device...
- Method of Fabricating a Self-Aligned High Speed MOSFET Device Application Type: Continuation (in part) Patent Number: 5599728 Country: United States Status: Filed on 28-Oct-1994, ...
URL: https://www.src.org/library/patent/p0006/
Modified: 1997-02-04 - 22KB
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- 8:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 9:
Silicon-on-insulator transistors having improved current characteristi...
- Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Application Type: Divisional Patent Number: 5982003 ...
URL: https://www.src.org/library/patent/p0002/
Modified: 1999-11-09 - 22KB
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- 10:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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