[x]
GRC Science Area
MBP – Materials & Bulk Processes Sciences
[x]
Content Type
Patent Filings
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| 1 through 11 of
11 similar documents, best matches first. |
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- 1:
Dynamic Threshold Voltage Mosfet Having Gate to Body Connection...
- Dynamic Threshold Voltage Mosfet Having Gate to Body Connection for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5559368 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0004/
Modified: 1996-09-24 - 22KB
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- 2:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 3:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 4:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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- 5:
Method of Fabricating a Self-Aligned High Speed MOSFET Device...
- Method of Fabricating a Self-Aligned High Speed MOSFET Device Application Type: Continuation (in part) Patent Number: 5599728 Country: United States Status: Filed on 28-Oct-1994, ...
URL: https://www.src.org/library/patent/p0006/
Modified: 1997-02-04 - 22KB
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- 6:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 7:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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- 8:
Silicon-on-insulator transistors having improved current characteristi...
- Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Application Type: Divisional Patent Number: 5982003 ...
URL: https://www.src.org/library/patent/p0002/
Modified: 1999-11-09 - 22KB
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- 9:
Apparatus and Method for Shaping and Detecting a Particle Beam...
- Apparatus and Method for Shaping and Detecting a Particle Beam Application Type: Utility Patent Number: 5270542 Country: United States Status: Filed on 31-Dec-1992, Issued on ...
URL: https://www.src.org/library/patent/p0197/
Modified: 1993-12-14 - 22KB
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- 10:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
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- 11:
Method for Forming a Layer of Uniform Thickness On a Semiconductor...
- Method for Forming a Layer of Uniform Thickness On a Semiconductor Wafer During Rapid Thermal Processing Application Type: Utility Patent Number: 5439850 Country: United States ...
URL: https://www.src.org/library/patent/p0033/
Modified: 1995-08-08 - 21KB
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11 similar documents, best matches first. |
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