[x]
Thrust/Theme
DCMOS – Digital CMOS Technologies
[x]
Content Type
Patent Filings
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2 similar documents, best matches first. |
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- 1:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB
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- 2:
High Capacitance Density Gate Dielectrics for III-V Semiconductor...
- High Capacitance Density Gate Dielectrics for III-V Semiconductor Channels Using a Pre-Disposition Surface Treatment Involving Plasma and Ti Precursor Exposure Application Type: ...
URL: https://www.src.org/library/patent/p1506/
Modified: 2015-11-17 - 22KB
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