[x]
GRC Science Area
MPS – Material & Process Sciences
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Content Type
Patent Filings
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| 1 through 9 of
9 similar documents, best matches first. |
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- 1:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB
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- 2:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 3:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 4:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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- 5:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB
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- 6:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB
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- 7:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 8:
Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated...
- Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated Circuits Application Type: Utility Patent Number: 6818990 Country: United States Status: Filed on 3-Apr-2000, ...
URL: https://www.src.org/library/patent/p0589/
Modified: 2004-11-16 - 22KB
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- 9:
High Gain Integrated Antenna and Devices Therefrom (Patent P0392...
- High Gain Integrated Antenna and Devices Therefrom Application Type: Utility Patent Number: 6842144 Country: United States Status: Filed on 10-Jun-2003, Issued on 11-Jan-2005, ...
URL: https://www.src.org/library/patent/p0392/
Modified: 2005-01-11 - 22KB
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9 similar documents, best matches first. |
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