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- 1:
Vertical Gate-depleted single electron transistors (Patent P0427...
- Vertical Gate-depleted single electron transistors Application Type: Foreign National Patent Number: 92132776 Country: Taiwan Status: Filed on 21-Nov-2003, Issued on 13-Nov-2006 ...
URL: https://www.src.org/library/patent/p0427/
Modified: 2006-11-13 - 22KB
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- 2:
Vertical Gate-Depleted Single Electron Transistors (Patent P0320...
- Vertical Gate-Depleted Single Electron Transistors Application Type: Utility Patent Number: 7547932 Country: United States Status: Filed on 22-Nov-2002, Issued on 16-Jun-2009, ...
URL: https://www.src.org/library/patent/p0320/
Modified: 2009-06-16 - 22KB
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- 3:
Optoelectronic Devices Having Arrays of Quantum Dot Compound...
- Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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- 4:
Optoelectronic Devices having Arrays of Quantum Dot Compound...
- Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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- 5:
Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...
- Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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- 6:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 7:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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