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GRC Science Area
MBP – Materials & Bulk Processes Sciences
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- 1:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 2:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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- 3:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 4:
Silicon-on-insulator transistors having improved current characteristi...
- Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Application Type: Divisional Patent Number: 5982003 ...
URL: https://www.src.org/library/patent/p0002/
Modified: 1999-11-09 - 22KB
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- 5:
Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET...
- Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5780899 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0016/
Modified: 1998-07-14 - 22KB
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- 6:
Method of Fabricating a Self-Aligned High Speed MOSFET Device...
- Method of Fabricating a Self-Aligned High Speed MOSFET Device Application Type: Continuation (in part) Patent Number: 5599728 Country: United States Status: Filed on 28-Oct-1994, ...
URL: https://www.src.org/library/patent/p0006/
Modified: 1997-02-04 - 22KB
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