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| Patent Filings | 1 |
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- 1: High Capacitance Density Gate Dielectrics for III-V Semiconductor...
- High Capacitance Density Gate Dielectrics for III-V Semiconductor Channels Using a Pre-Disposition Surface Treatment Involving Plasma and Ti Precursor Exposure Application Type: ...
URL: https://www.src.org/library/patent/p1506/
Modified: 2015-11-17 - 22KB
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