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GRC ~4800
FCRP ~2000
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Year
2019 ~60
2018 ~300
2017 ~500
2016 ~700
2015 ~700
2014 ~700
2013 ~600
2012 ~500
2011 ~500
2010 ~700
2009 ~600
2008 ~700
2007 ~600
2006 ~600
2005 ~400
2004 ~400
2003 ~300
2002 ~200
2001 ~200
2000 ~200
1999 ~200
1998 ~200
1997 ~200
1996 ~200

Center
FENA ~700
C-SPIN ~600
MSD ~600
FAME ~500
LEAST ~500
IFC ~400
SWAN ~400
CNFD ~300
CAIST ~200
INDEX ~200
MIND ~200
NRI-NSF ~200
C2S2 ~100
EBSM ~100
NCRC ~100
TxACE ~100
WIN ~100
SONIC ~90
ASCENT ~80
E2CDA-NRI ~60
GSRC ~50
TerraSwarm ~50
AMML ~40
CEMPI ~40
Benchmarking ~30
C-FAR ~20
CAPSL ~20
E2CDA ~20
IPC ~20
MuSyC ~20
NEWLIMITS ~20
NPT ~20
ACE4S ~10
CBRIC ~10
CRISP ~10
ComSenTer ~9
DEEP3M ~6
ADA ~5
ESPE ~5
NRI-Projects ~5

Thrust/Theme
BEP – Back End Processes ~500
DCMOS – Digital CMOS Technologie... ~500
Advanced Devices & Technologies ~300
DSMS – Device Sciences Modeling ... ~300
Factory Systems ~300
PAT – Patterning ~300
PKG – Packaging ~300
Back End Processes ~200
CD – Circuit Design ~200
AMS – Analog and Mixed-Signal De... ~100
ESH – Environment Safety and Hea... ~100
LMD – Logic and Memory Devices ~100
MT – Memory Technologies ~100
NEM – Nanoengineered Materials ~100
NMP – Nanomanufacturing Material... ~100
Packaging & Interconnect Systems ~100
LPD – Logic & Physical Design ~90
Pat(MPS) – Patterning ~90
ISD – Integrated System Design ~80
AMS-CSD – Analog/Mixed-Signal Ci... ~70
CM – Compact Modeling ~60
AMML-T1 – Antiferromagnetic Magn... ~40
ASCENT-T2 – Beyond CMOS ~40
I3T – Innovative and Intelligent... ~40
SLD – System Level Design ~40
ASCENT-T1 – Vertical CMOS ~30
ASCENT-T4 – Merged Logic Memory ... ~30
EP3C – Efficiency and Performanc... ~30
Equip – Equipment ~30
Modeling & Simulation ~30
NCR – Non-Classical CMOS Researc... ~30
T3S – Trustworthy and Secure Sem... ~30
TT – Test & Testability ~30
ASCENT-T3 – Heterogeneous Integr... ~20
E2CDA2 – E2CDA 2.0 ~20
Front End Processes ~20
Physical Design ~20
CADT – Computer-Aided Design and... ~10
CAPSL-T2 – P-transistors for PSL... ~10
CAPSL-T4 – Architectures and Sys... ~10
CFM&TCM – CFM & Total Chemical M... ~10
CRISP-T1 – Hardware Support for ... ~10
FEOL – FEOL Processes ~10
Materials ~10
NEWLIMITS-T2 – 2D Materials Devi... ~10
Quality & Reliability ~10
SemiSynBio – Semiconductor Synth... ~10
CBRIC-T2 – Neuromorphic Fabrics ~9
VER – Verification ~9
CAPSL-T1 – Materials Development... ~8
CAPSL-T3 – Device Models and Tut... ~8
ComSenTer-T3 – Application-speci... ~6
DEEP3M-T1 – Devices ~6
DEEP3M-T3 – Materials ~6
Modeling & TCAD ~6
NEWLIMITS-T4 – Characterization ... ~6
Reliability ~6
TechCAD – Technology CAD ~6
ADS – Alternative Device Structu... ~5
ComSenTer-T1 – Systems and Algor... ~5
DEEP3M-T2 – Circuits ~5
DEEP3M-T4 – Architectures ~5
FacOps – Factory Operations ~5
Logic Design ~5
NEWLIMITS-T3 – Advanced Manufact... ~5
NEWLIMITS-T5 – Simulations and M... ~5
PatSys – Patterning Systems ~5
C&S – Controls and Sensing ~4
CRISP-T3 – Scaling Applications ... ~4
ComSenTer-T4 – Center-wide Demon... ~4
PMM – Packaging Materials and Me... ~4
PMS – Packaging Modeling and Sim... ~4
PS/E – Process Simplification/En... ~4
ADA-T2 – Algorithm-driven Archit... ~3
ComSenTer-T2 – mm-wave/THz ICs a... ~3
DV – Design Verification ~3
Metrology ~3
NEWLIMITS-T1 – Novel Computing a... ~3
Processes – Processes ~3
SMART-T2 – Ultra-Low Loss Spin W... ~3
Semiconductor Modeling & Simulat... ~3
ADA-T1 – Agile System Developmen... ~2
ADA-T3 – Technology-driven Syste... ~2
AdvTech – Advanced Technology ~2
CBRIC-T1 – Neuro-inspired Algori... ~2
CBRIC-T4 – Application Drivers ~2
DesSyn – Design Synthesis ~2
DesTech – Design Techniques ~2
FACSYS – Factory Systems ~2
SMART-T3 – Magneto-ionic Materia... ~2
CBRIC-T3 – Distributed Intellige... ~1
CRISP-T2 – System Support for Ma... ~1
CSR – Cross-Disciplinary Semicon... ~1
MTMP – Metrology Tools Matls & P... ~1
Packaging Materials Interfaces ~1
PatMat – Patterning Materials ~1
SMART-T1 – Spin-orbit Torque Mat... ~1
Synthesis & Verification ~1
TCAD-MBPS ~1

GRC Science Area
DS – Device Sciences ~1100
IPS – Interconnect & Packaging S... ~700
MPS – Material & Process Science... ~600
NIS – Nanostructure & Integratio... ~400
NMS – Nanomanufacturing Sciences ~400
CADTS – Computer Aided Design & ... ~200
ICSS – Integrated Circuit & Syst... ~200
MBP – Materials & Bulk Processes... ~200
CSR – Cross-disciplinary Semicon... ~100
INT – Interconnect Sciences ~100
PID – Process Integration & Devi... ~100
PKG – Packaging Sciences ~70
LIT – Lithography Sciences ~50
ESH – Environmental Safety & Hea... ~20
FAC – Factory Sciences ~20
DES – Design Sciences ~10
SMS – Semiconductor Modeling & S... ~10
MFGPS – Manufacturing Process Sc... ~3

1 through 30 of approximately 10,167 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>
1: pdfPHYSICAL REVIEW B
PHYSICAL REVIEW B 96, 014435 (2017) Model of orbital populations for voltage-controlled magnetic anisotropy in transition-metal thin films Jia Zhang, 1,2,* Pavel V. Lukashev, 3 ...
URL: https://www.src.org/library/publication/p090148/p090148.pdf
Modified: 2017-09-08 - 1.5MB
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2: pdfCNFD Semi-Annual Report, March 31, 2017
Theme 1: Magnetoelectric Devices. Theme 1 continues to refine its approach in developing room- temperature spintronic device prototypes utilizing voltage-switchable interface ...
URL: https://www.src.org/library/publication/p090682/p090682.pdf
Modified: 2017-04-11 - 1.5MB
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3: pdfC-SPIN Center Director's Research Highlights for Milestone #5...
Mingzhong Wu (Colorado State University). Four of them are replacing the four PIs from Cornell. Jeffrey Boker is carrying out a two-year seed project. This group both reinforces ...
URL: https://www.src.org/library/publication/p069723/p069723.pdf
Modified: 2014-03-27 - 349KB
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4: pdfEnhancement of Voltage-Controlled Magnetic Anisotropy Through...
Xiang Li, Kevin Fitzell, Di Wu, C. Ty Karaba, Abraham Buditama, Guoqiang Yu, Kin L. Wong, Nicholas Altieri, Cecile Grezes, Nicholas Kioussis, Sarah Tolbert, Zongzhi Zhang, Jane P. ...
URL: https://www.src.org/library/publication/p090665/p090665.pdf
Modified: 2017-04-05 - 318KB
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5: pdfA New Mechanism for Electric-field Controlled Bidirectional Magnetizat...
... Based on the theory in Ref. 40, the strength (J) of IEC can be interpreted as the energy difference of quantum well states between FM and antiferromagnetic (AFM) coupling ...
URL: https://www.src.org/library/publication/p093321/p093321.pdf
Modified: 2018-03-31 - 741KB
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6: pdfElectric-field Controlled Bidirectional Magnetization Switching...
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA. In this work, we report a novel switching mechanism to realize a parallel-antiparallel ...
URL: https://www.src.org/library/publication/p093964/p093964.pdf
Modified: 2018-07-12 - 526KB
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7: pdfSpin-Torque Sensors for Energy Efficient High Speed Long Interconnects
Metal (SHM) in our design to achieve high speed sensing. We show both single and multi-bit operations that reveal major benefits at higher speeds. Our simulation results show that ...
URL: https://www.src.org/library/publication/p086571/p086571.pdf
Modified: 2015-12-02 - 618KB
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8: pdfCNFD Semi-Annual Report, February 28, 2015
... Currently fabrication of Ta/CoFeB/MgO nanowire devices is under way. We have also demonstrated parametric generation of spin waves in CoFeB/MgO/CoFeB nanoscale magnetic tunnel ...
URL: https://www.src.org/library/publication/p083925/p083925.pdf
Modified: 2015-04-30 - 3.0MB
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9: pdfVoltage Controlled Interlayer Coupling in Perpendicular Magnetic...
Joule heating, could dramatically reduce the switching energy. Indeed, in MTJs with perpendicular easy axes (pMTJs), a switching energy that is more than ten times smaller than ...
URL: https://www.src.org/library/publication/p088432/p088432.pdf
Modified: 2016-07-21 - 990KB
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10: pdfIn-situ, In-Memory Stateful Vector Logic Operations based on...
In-situ, In-Memory Stateful Vector Logic Operations based on Voltage Controlled Magnetic Anisotropy Akhilesh Jaiswal 1,* , Amogh Agrawal 1 , and Kaushik Roy 1 1 School of ...
URL: https://www.src.org/library/publication/p093174/p093174.pdf
Modified: 2018-02-23 - 5.8MB
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11: pdfVoltage Controlled Interlayer Coupling in Perpendicular Magnetic...
... Joule heating, could dramatically reduce the switching energy. Indeed, in MTJs with 6 perpendicular easy axes (pMTJs), a switching energy that is more than ten times smaller than ...
URL: https://www.src.org/library/publication/p089239/p089239.pdf
Modified: 2017-01-09 - 968KB
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12: pdfCNFD Year One Semi-Annual Report
Theme 1: Magnetoelectric Devices. This Theme is focused on nonvolatile magnetoelectric (ME) devices that utilize voltage-controlled boundary magnetization in magnetoelectric ...
URL: https://www.src.org/library/publication/p068716/p068716.pdf
Modified: 2013-10-29 - 1.4MB
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13: pdfSWAN Semi Annual Report, February 28, 2015
Development of Low-k Dielectrics for Graphene - J. Kim (UTD) 19 2400.007 - (T1.7) Deposition on Monolayers Dielectrics and Nanometrology of BISFETS and Related Devices - Kummel ...
URL: https://www.src.org/library/publication/p083928/p083928.pdf
Modified: 2015-04-30 - 5.2MB
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14: pdfCNFD Semi-Annual Report, August 28, 2015
Themes are the subject of these investigations as described below. Theme 1: Magnetoelectric Devices. Theme 1 develops spintronic device prototypes where voltage- controlled ...
URL: https://www.src.org/library/publication/p086524/p086524.pdf
Modified: 2015-11-20 - 3.0MB
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15: pdfPHYSICAL REVIEW B
PHYSICAL REVIEW B 94, 014435 (2016) Band structure and spin texture of Bi 2 Se 3 3d ferromagnetic metal interface Jia Zhang, 1,* Julian P. Velev, 2,1 Xiaoqian Dang, 1 and Evgeny Y. ...
URL: https://www.src.org/library/publication/p087996/p087996.pdf
Modified: 2016-07-28 - 2.6MB
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16: pdfSWAN Semi-Annual Report 8-31-2014
Development of Low-k Dielectrics for Graphene - J. Kim (UTD) 17 2400.007 - (T1.7) Deposition on Monolayers Dielectrics and Nanometrology of BISFETS and Related Devices - Kummel ...
URL: https://www.src.org/library/publication/p072432/p072432.pdf
Modified: 2014-10-24 - 5.5MB
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17: pdfSWAN Semi Annual Report, August 31, 2015
Development of Low-k Dielectrics for Graphene - J. Kim (UTD) 15 2400.007 - (T1.7) Deposition on Monolayers Dielectrics and Nanometrology of BISFETS and Related Devices - Kummel ...
URL: https://www.src.org/library/publication/p086526/p086526.pdf
Modified: 2015-11-20 - 4.0MB
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18: pdfFirst-Principles Calculation of Electric Field Effect on Interface...
Rizvi Ahmed and Randall H. Victora Department of Electrical and Computer Engineering University of Minnesota-Twin Cities BACKGROUND BACKGROUND III. RESULTS AND DISCUSSION III. ...
URL: https://www.src.org/library/publication/p071965/p071965.pdf
Modified: 2014-09-24 - 186KB
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19: pdfVoltage Controlled Magnetocrystalline Anisotropy at the Fe/MgO...
Voltage controlled magnetocrystalline anisotropy at the Fe/MgO (001) interface P. Lukashev and E. Y. Tsymbal Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, ...
URL: https://www.src.org/library/publication/p073318/p073318.pdf
Modified: 2015-02-12 - 10KB
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20: pdfNonlinear VCMA Effect in Perpendicular Magnetic Tunnel Junctions
ABSTRACT . Nonlinear PMA-electric field behavior was observed in NM/CoFeB/MgO system. . Nonlinearity can be modulated by changing oxidation level at CoFeB/MgO interface. . ...
URL: https://www.src.org/library/publication/p092335/p092335.pdf
Modified: 2017-09-15 - 544KB
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21: pdfASCENT Center Director's Research Highlights for Milestone #3...
Suman Datta, Center Director (Univ. of Notre Dame) 574-631-8835 sdatta@nd.edu Theme Highlights Agreement No. HR0011-18-3-0004 ● Milestone Report IIB - 1 II.B ASCENT Center ...
URL: https://www.src.org/library/publication/p095467/p095467.pdf
Modified: 2018-12-03 - 5.5MB
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22: pdfA qualitative picture for voltage controlled magnetic anisotropy
... The interface/surface structure and bonding. 2. The population of different d-orbitals (d xy ,d yz ,d xz ,d z2 ,d x2-y2 ). MAE calculated from 2 nd perturbation Theory: M z M x The ...
URL: https://www.src.org/library/publication/p088924/p088924.pdf
Modified: 2016-08-30 - 1.6MB
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23: pdfMATERIALS AND ELECTRICAL PROPERTIES OF ALCVD ZRO GATE DIELECTRICS
... Fundamental constituents of an EOT measurement. 1.3.4 New Transistor Structures In addition to the strong efforts in scaling SiO 2 and alternative gate dielectric materials, there ...
URL: https://www.src.org/library/publication/p009922/p009922.pdf
Modified: 2004-08-23 - 5.4MB
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24: pdfExcitation of Spin Waves in an In-Plane-Magnetized Ferromagnetic...
Excitation of Spin Waves in an In-Plane-Magnetized Ferromagnetic Nanowire Using Voltage-Controlled Magnetic Anisotropy Roman Verba, 1,* Mario Carpentieri, 2 Giovanni Finocchio, 3 ...
URL: https://www.src.org/library/publication/p092374/p092374.pdf
Modified: 2017-09-18 - 353KB
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25: pdfParametric excitation of spin waves in ultrathin ferromagnetic...
Parametric excitation of spin waves in ultrathin ferromagnetic strips by an electric field using the effect of voltage-controlled magnetic anisotropy Roman Verba, 1, a) Vasil ...
URL: https://www.src.org/library/publication/p069248/p069248.pdf
Modified: 2014-01-28 - 235KB
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26: pdfMagnetization States of All-Oxide Spin Valves Controlled by Charge...
Magnetization States of All-Oxide Spin Valves Controlled by Charge-orbital Ordering of Coupled Ferromagnets Han-Chun Wu 1 , Oleg N. Mryasov 2 , Mohamed Abid 3,4 , Kevin Radican 1 & ...
URL: https://www.src.org/library/publication/p066555/p066555.pdf
Modified: 2013-05-06 - 1.7MB
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27: pdfElectrical Control of Metallic Heavy-metal/Ferromagnet Interfacial...
Department of Physics, University of Arizona, Tucson, Arizona 85721, USA. 2 Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA ...
URL: https://www.src.org/library/publication/p091627/p091627.pdf
Modified: 2017-08-04 - 268KB
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28: pdfNebraska 2009 NRI-NSF Visit
...Oscillators for Non-Charge Based Ultra Low Power Logic and Comm. MIT MRSEC (UVA) 2009: Reconfigurable Array Magnetic Automata (RAMA) Northwestern MRSEC 2009: Generating, Probing, ...
URL: https://www.src.org/library/publication/p054778/p054778.pdf
Modified: 2010-01-25 - 10.2MB
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29: pdfReversible Control of Co Magnetism by Voltage Induced Oxidation
...Color online) (a) Schematic of the sample structure and experimental setup. (b) R H -H z curves of the sample in as-deposited state (black) and after staying at 200 °C for 10 min ...
URL: https://www.src.org/library/publication/p071863/p071863.pdf
Modified: 2014-11-17 - 519KB
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30: pdfCNFD Year 3 - 2nd Semi-Annual Report
Theme 1: Magnetoelectric Devices. Theme 1 develops spintronic device prototypes where voltage- controlled interface magnetism of a magnetoelectric (ME) antiferromagnet is used to ...
URL: https://www.src.org/library/publication/p087399/p087399.pdf
Modified: 2016-04-11 - 1.7MB
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1 through 30 of approximately 10,167 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>