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2005 ~500
2004 ~500
2003 ~400
2002 ~300
2001 ~300
2000 ~200
1999 ~200
1998 ~300
1997 ~300
1996 ~200
1995 ~1

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FENA ~1000
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INDEX ~200
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CRISP ~30
E2CDA ~30
Benchmarking ~20
AMML ~10
CAPSL ~10
CONIX ~10
ComSenTer ~9
ESPE ~7
ADA ~5
DEEP3M ~5

Thrust/Theme
BEP – Back End Processes ~900
PKG – Packaging ~700
DCMOS – Digital CMOS Technologie... ~600
PAT – Patterning ~600
Factory Systems ~500
ESH – Environment Safety and Hea... ~400
Advanced Devices & Technologies ~200
Back End Processes ~200
CD – Circuit Design ~200
DSMS – Device Sciences Modeling ... ~200
ISD – Integrated System Design ~200
NEM – Nanoengineered Materials ~200
NMP – Nanomanufacturing Material... ~200
Packaging & Interconnect Systems ~200
Pat(MPS) – Patterning ~200
LMD – Logic and Memory Devices ~100
LPD – Logic & Physical Design ~100
MT – Memory Technologies ~100
SLD – System Level Design ~100
AMS-CSD – Analog/Mixed-Signal Ci... ~90
CADT – Computer-Aided Design and... ~70
EP3C – Efficiency and Performanc... ~60
TT – Test & Testability ~60
AMS – Analog and Mixed-Signal De... ~50
I3T – Innovative and Intelligent... ~50
T3S – Trustworthy and Secure Sem... ~50
ASCENT-T1 – Vertical CMOS ~40
ASCENT-T2 – Beyond CMOS ~30
ASCENT-T4 – Merged Logic Memory ... ~30
E2CDA2 – E2CDA 2.0 ~30
Modeling & Simulation ~30
CBRIC-T1 – Neuro-inspired Algori... ~20
CBRIC-T2 – Neuromorphic Fabrics ~20
CRISP-T1 – Hardware Support for ... ~20
FEOL – FEOL Processes ~20
NCR – Non-Classical CMOS Researc... ~20
NEWLIMITS-T2 – 2D Materials Devi... ~20
NEWLIMITS-T4 – Characterization ... ~20
PMM – Packaging Materials and Me... ~20
SemiSynBio – Semiconductor Synth... ~20
AMML-T1 – Antiferromagnetic Magn... ~10
ASCENT-T3 – Heterogeneous Integr... ~10
CFM&TCM – CFM & Total Chemical M... ~10
CM – Compact Modeling ~10
CONIX-T2 – Platforms Programming... ~10
Front End Processes ~10
Materials ~10
NEWLIMITS-T3 – Advanced Manufact... ~10
PatSys – Patterning Systems ~10
Processes – Processes ~10
VER – Verification ~10
C&S – Controls and Sensing ~9
CAPSL-T4 – Architectures and Sys... ~9
ComSenTer-T1 – Systems and Algor... ~9
DesSyn – Design Synthesis ~9
Equip – Equipment ~9
Physical Design ~9
CAPSL-T2 – P-transistors for PSL... ~8
CRISP-T2 – System Support for Ma... ~8
DV – Design Verification ~8
Modeling & TCAD ~8
CBRIC-T3 – Distributed Intellige... ~7
CBRIC-T4 – Application Drivers ~7
ComSenTer-T2 – mm-wave/THz ICs a... ~7
DesTech – Design Techniques ~7
NEWLIMITS-T5 – Simulations and M... ~7
PatMat – Patterning Materials ~7
Semiconductor Modeling & Simulat... ~7
CAPSL-T1 – Materials Development... ~5
CRISP-T3 – Scaling Applications ... ~5
ComSenTer-T3 – Application-speci... ~5
ComSenTer-T4 – Center-wide Demon... ~5
DEEP3M-T1 – Devices ~5
DEEP3M-T3 – Materials ~5
Logic Design ~5
Metrology ~5
ADA-T2 – Algorithm-driven Archit... ~4
CAPSL-T3 – Device Models and Tut... ~4
CONIX-T4 – Interacting Services ~4
DEEP3M-T2 – Circuits ~4
DEEP3M-T4 – Architectures ~4
FacOps – Factory Operations ~4
MTMP – Metrology Tools Matls & P... ~4
Quality & Reliability ~4
Reliability ~4
Synthesis & Verification ~4
AdvTech – Advanced Technology ~3
CONIX-T1 – Physically-coupled Co... ~3
DE – Design Environment ~3
NEWLIMITS-T1 – Novel Computing a... ~3
PS/E – Process Simplification/En... ~3
SMART-T3 – Magneto-ionic Materia... ~3
TCAD-MBPS ~3
ADA-T1 – Agile System Developmen... ~1
CONIX-T3 – Security Robustness a... ~1
FACSYS – Factory Systems ~1
FAM – Factory Automation & Manag... ~1
PMS – Packaging Modeling and Sim... ~1
Packaging Materials Interfaces ~1
PhyDes – Physical Design ~1
SMART-T1 – Spin-orbit Torque Mat... ~1
SMART-T2 – Ultra-Low Loss Spin W... ~1
TechCAD – Technology CAD ~1

GRC Science Area
IPS – Interconnect & Packaging S... ~1300
MPS – Material & Process Science... ~1100
DS – Device Sciences ~900
NMS – Nanomanufacturing Sciences ~900
ICSS – Integrated Circuit & Syst... ~400
NIS – Nanostructure & Integratio... ~300
CADTS – Computer Aided Design & ... ~200
MBP – Materials & Bulk Processes... ~200
INT – Interconnect Sciences ~100
LIT – Lithography Sciences ~100
PID – Process Integration & Devi... ~100
PKG – Packaging Sciences ~100
CSR – Cross-disciplinary Semicon... ~80
ESH – Environmental Safety & Hea... ~60
DES – Design Sciences ~40
FAC – Factory Sciences ~40
SMS – Semiconductor Modeling & S... ~20
MFGPS – Manufacturing Process Sc... ~3

1 through 30 of approximately 13,545 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>
1: pdfThe Structural Stability and Phase Transition of MoTe2
The Structural Stability and Phase Transition of MoTe 2 Hui Zhu, Q. Wang, L. Cheng, C. Zhang, R. Addou, J. Kim, K. Cho, M. J. Kim, and Robert M. Wallace Department of Materials ...
URL: https://www.src.org/library/publication/p092117/p092117.pdf
Modified: 2017-09-05 - 3.1MB
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2: pdfDefects and Surface Structural Stability of MoTe2 under Vacuum...
... Characterization and defect identification of the 2H-MoTe 2 crystal. (a) XPS spectra of Te 3d 5/2 and Mo Mo 3d core level regions from a fresh-exfoliated bulk MoTe 2 . (b) ...
URL: https://www.src.org/library/publication/p091451/p091451.pdf
Modified: 2017-09-21 - 4.5MB
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3: pdfThe Structural Stability and Phase Transition of MoTe2 Activated...
Nature Materials 2014, 13, 1128. J, Sung; Nat. Phys. 2017, September accepted. 2 Duerloo, K.; Nat. Commun. 2014, 5, 1. Ground-state energy differences Td or 1T' 2H 1T  Growth of ...
URL: https://www.src.org/library/publication/p090781/p090781.pdf
Modified: 2017-11-03 - 3.5MB
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4: pdfThe Structural Stability and Phase Transition of MoTe2
... Figure 3e (right)). The STEM results suggest that the formation of the WWs is a kinetic process induced by annealing. Figure 4. Growth and characterization of Mo6Te6 NWs at 450 ...
URL: https://www.src.org/library/publication/p091261/p091261.pdf
Modified: 2017-07-11 - 478KB
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5: pdfThe Structural Stability of MoTe2 and Atomic Layer Etching of...
 The intercalated Te defect and the inversion domain boundary defect in 2H-MoTe 2 have been comprehensively investigated with STM and STEM.  The thermal stability of 2H-MoTe ...
URL: https://www.src.org/library/publication/p092081/p092081.pdf
Modified: 2017-09-01 - 3.8MB
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6: pdfThe Structural Stability and Phase Transition of MoTe2
...Collaborated with Qingxiao Wang under Prof. Moon Kim's group @ UTD . Base pressure ~1.510 -6 mbar . In-situ Heating Chips (Protochips Inc.); the temperature ramp-up rate > 100 ...
URL: https://www.src.org/library/publication/p091830/p091830.pdf
Modified: 2017-09-19 - 3.6MB
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7: pdfNanoscale Characterization of 2D Materials
... Perspective on Applications from Silicon to 2D Materials. Robert M. Wallace. P091237 2. Intrinsic Air Stability Mechanisms of Two-dimensional Transition Metal Dichalcogenide ...
URL: https://www.src.org/library/publication/p092080/p092080.pdf
Modified: 2017-09-21 - 4.2MB
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8: pdfUT-Dallas Summary for NRI Review Highlights and Discoveries
Semiclassical Transport studies in 2D Materials and Devices (T4.3) Max Fischetti, William Vandenberghe Maarten Van de Put (post-doc), Gautam Gaddemane, and Shanmeng Chen (students) ...
URL: https://www.src.org/library/publication/p092592/p092592.pdf
Modified: 2017-10-17 - 5.0MB
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9: pdf2D Materials: Integration Challenges and Opportunities for Device...
Partnership (UNITE) under the NSF award ECCS-1407765. Keywords: #164 - Composition & Microstructure: Near Surface Techniques: scanning tunneling microscopy (STM) #176 - Composition ...
URL: https://www.src.org/library/publication/p088027/p088027.pdf
Modified: 2016-12-01 - 7.0MB
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10: pdfNew Materials for LogIc, Memory and InTerconnectS Center: Theme...
... With bilayer HfO2/Al2O3 (10/3 nm) top gate stack, S. Fathipour, "Electric double layer doping ... TMD TFETs," Notre Dame Doctoral Dissertation, Oct. 2017. (12) A. Seabaugh, et al. ...
URL: https://www.src.org/library/publication/p095182/p095182.pdf
Modified: 2018-10-15 - 8.3MB
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11: pdf2D Materials Integration: What have we learned?
Materials Integration: What have we learned? Robert M. Wallace University of Texas at Dallas, Richardson, Texas, USA The size reduction and economics of integrated circuits, ...
URL: https://www.src.org/library/publication/p092263/p092263.pdf
Modified: 2017-10-24 - 6.3MB
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12: pdfNEWLIMITs Materials Characterization and Benchmarking
...Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 4, 011043 (2014). P068968 (19) Using Bi as surfactant rather than lowering growth rate. (Xing) (23) ...
URL: https://www.src.org/library/publication/p094197/p094197.pdf
Modified: 2018-08-09 - 4.7MB
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13: pdf2D Materials for Advanced Devices: Integration Challenges and...
Engineering and Computer Science at the University of Texas at Dallas. 1. S. J. McDonnell and R.M.Wallace, "Critical Review: Atomically-Thin Layered Films for Device Applications ...
URL: https://www.src.org/library/publication/p090688/p090688.pdf
Modified: 2017-11-03 - 7.9MB
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14: pdfPhysical Characterization of 2D Device Materials: Challenges...
The SWAN Center, a SRC center sponsored by the Nanoelectronics Research Initiative and NIST. . The US/Ireland R&D Partnership (UNITE) under the NSF award ECCS-1407765.  2016 ...
URL: https://www.src.org/library/publication/p090053/p090053.pdf
Modified: 2017-05-11 - 11.6MB
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15: pdfNew Mo6Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2
...Figure S2, Supporting Information). Before the NW phase forms, the 2H-MoTe 2 structure is maintained, and the image contrast is only affected by some surface decomposition and Te ...
URL: https://www.src.org/library/publication/p089622/p089622.pdf
Modified: 2017-07-18 - 2.1MB
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16: pdfSurface reconstruction of 2H-MoTe2 to metallic Mo6Te6 nanowires...
Chemical concentration of the mixing regions is not clear. 2H, 1T, 1T', and chevrel Mo 6 Te 8 phase?  It is important to re-estimate the thermal driven phase transition process; ...
URL: https://www.src.org/library/publication/p089163/p089163.pdf
Modified: 2016-09-10 - 1.8MB
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17: pdfHighlights of Surface/Interface Research for Steep Slope 2D Materials
The SWAN Center, a SRC center sponsored by the Nanoelectronics Research Initiative and NIST. . The US/Ireland R&D Partnership (UNITE) under the NSF award ECCS-1407765. Wallace Team ...
URL: https://www.src.org/library/publication/p090267/p090267.pdf
Modified: 2017-02-08 - 8.8MB
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18: pdfLinking In-situ and Ex-situ Characterization of TMD Materials
Originally to be done by November, 2017 for Jan. 1, 2018 start . Students originally envisioned had to be reassigned to other support . Lack of alignment with academic year impacts ...
URL: https://www.src.org/library/publication/p093368/p093368.pdf
Modified: 2018-04-09 - 4.2MB
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19: pdfMBE Growth of 2H-MoTe2 and 1T'-MoTe2 on 3D Substrates
MBE growth of few-layer 2H-MoTe 2 on 3D substrates Suresh Vishwanath a,b,⇑ , Aditya Sundar c , Xinyu Liu d , Angelica Azcatl e , Edward Lochocki f , Arthur R. Woll g , Sergei ...
URL: https://www.src.org/library/publication/p090761/p090761.pdf
Modified: 2017-11-10 - 549KB
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20: pdfAtomic Resolution Microscopy of 2D TMDs
... The measure value is about 1.47 to 1.48 eV. NANO & BEYOND Graphene NANO & BEYOND Carbon Nano Canyon Graphene Nano Canyon, 2009 11 micrometer x10 micrometer. © Nano & Beyond Lab., ...
URL: https://www.src.org/library/publication/p087741/p087741.pdf
Modified: 2016-05-11 - 12.1MB
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21: pdfThe impact of contact deposition ambient on the interfacial chemistry...
This aspect has been recently investigated from a device characterization perspective. 1,2 In this presentation, we present our recent studies of the in situ interface chemistry of ...
URL: https://www.src.org/library/publication/p089546/p089546.pdf
Modified: 2017-04-20 - 13.0MB
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22: pdfUsing Photoelectron Spectroscopy in the Integration of 2D Materials...
... The current TMD technology was progressed to level 3-4 (technology development). An advance to level 5-6 (technology demonstration) requires solving several challenges related to ...
URL: https://www.src.org/library/publication/p092012/p092012.pdf
Modified: 2018-02-02 - 886KB
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23: pdfUT-Dallas RESEARCH SUMMARY
Tunable conduction band offset of 2.53 eV and 1.66 eV and dielectric constant from ~4.5 to 7.8 by replacing Al-O with Ti-O inorganic linkers in MALD films  Promising dielectric ...
URL: https://www.src.org/library/publication/p089555/p089555.pdf
Modified: 2016-10-20 - 5.2MB
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24: pdfEngineering the Pd-WSe2 Interface Chemistry for FETs with High...
Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J. Kim, Chadwin D. Young, Christopher L. Hinkle, Robert M. Wallace* Department of Materials Science and Engineering, University of Texas ...
URL: https://www.src.org/library/publication/p093987/p093987.pdf
Modified: 2018-09-04 - 1013KB
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25: pdfFCRP Quarterly Report 1QFY2008 (9/1/07-11/30/07)
... Differences between elements of two image areas). Each curve in the picture shows the effect of varying the number of threads granularity while keeping other optimization ...
URL: https://www.src.org/library/publication/p050268/p050268.pdf
Modified: 2008-02-26 - 15.7MB
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26: pdfFCRP Quarterly Report 2QFY2006 April 1, 2006 to June 30, 2006
April 1, 2006 to June 30, 2006. More detailed information on specific research can be obtained by contacting the PI involved or the PI's theme leader. We strongly encourage that ...
URL: https://www.src.org/library/publication/p017949/p017949.pdf
Modified: 2008-01-24 - 7.7MB
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27: pdfMagnetoresistive La(0.67)Sr((0.33)MnO(3) Nanowires
Experimental The reactants used in this preparation, SnCl 4 ´5H 2 O and propylene oxide, were obtained from Aldrich. In a typical synthesis, SnCl 4 ´5H 2 O (0.56 g, 1.6 mmol) was ...
URL: https://www.src.org/library/publication/p014997/p014997.pdf
Modified: 2006-03-02 - 313KB
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28: pdfSurface Engineering of Transition Metal Dichalcogenides for Two...
First of all, I would like to thank Professor Robert M. Wallace for his guidance during the doctorate program. He is a great scientist, and it has been a pleasure and honor to be ...
URL: https://www.src.org/library/publication/p089911/p089911.pdf
Modified: 2016-12-05 - 6.6MB
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29: pdfRealizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
Realizing Large-Scale, Electronic-Grade Two- Dimensional Semiconductors Yu-Chuan Lin, †,▽ Bhakti Jariwala, †,▽ Brian M. Bersch, † Ke Xu, ‡ Yifan Nie, § Baoming Wang, ...
URL: https://www.src.org/library/publication/p091667/p091667.pdf
Modified: 2018-02-19 - 1.0MB
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30: pdfThe Electronic Structure of Two Dimensional Materials
Under the Supervision of Professor Peter A. Dowben Lincoln, Nebraska April, 2017 ! The Electronic Structure of Two Dimensional Materials Iori Tanabe, Ph.D. University of Nebraska, ...
URL: https://www.src.org/library/publication/p090749/p090749.pdf
Modified: 2017-04-24 - 16.3MB
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1 through 30 of approximately 13,545 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>