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Publications

SRC Program
GRC ~17000
FCRP ~6400
STARnet ~4000
NRI ~3300
JUMP ~400
nCORE ~300
ERI ~100
SRC ~9
SRCEA ~9

Year
2019 ~200
2018 ~1000
2017 ~1300
2016 ~1700
2015 ~1800
2014 ~1900
2013 ~1600
2012 ~1600
2011 ~1800
2010 ~2300
2009 ~1800
2008 ~2400
2007 ~1700
2006 ~1700
2005 ~1500
2004 ~1400
2003 ~1000
2002 ~900
2001 ~800
2000 ~700
1999 ~700
1998 ~800
1997 ~500
1996 ~400
1994 ~3

Center
MSD ~2500
FENA ~2000
LEAST ~1600
IFC ~1300
SWAN ~1200
C-SPIN ~1100
CAIST ~1000
FAME ~1000
MIND ~600
NCRC ~600
EBSM ~500
INDEX ~500
C2S2 ~400
TxACE ~400
CNFD ~300
NRI-NSF ~300
SONIC ~300
WIN ~300
ASCENT ~200
E2CDA-NRI ~200
ACE4S ~100
CEMPI ~100
GSRC ~100
NPT ~100
NEWLIMITS ~90
IPC ~80
E2CDA ~70
AMML ~50
Benchmarking ~50
CBRIC ~40
CRISP ~40
ComSenTer ~40
C-FAR ~30
CAPSL ~30
DEEP3M ~20
NRI-Projects ~10
MuSyC ~6
SMART ~6
TerraSwarm ~6
ADA ~3

Thrust/Theme
DCMOS – Digital CMOS Technologie... ~2500
BEP – Back End Processes ~1700
Factory Systems ~1500
PKG – Packaging ~1400
Advanced Devices & Technologies ~1200
CD – Circuit Design ~800
PAT – Patterning ~700
DSMS – Device Sciences Modeling ... ~600
Back End Processes ~500
ESH – Environment Safety and Hea... ~500
MT – Memory Technologies ~500
LMD – Logic and Memory Devices ~400
NMP – Nanomanufacturing Material... ~400
AMS – Analog and Mixed-Signal De... ~300
LPD – Logic & Physical Design ~300
NEM – Nanoengineered Materials ~300
Packaging & Interconnect Systems ~300
AMS-CSD – Analog/Mixed-Signal Ci... ~200
CM – Compact Modeling ~200
I3T – Innovative and Intelligent... ~200
ISD – Integrated System Design ~200
NCR – Non-Classical CMOS Researc... ~200
Pat(MPS) – Patterning ~200
TT – Test & Testability ~200
ASCENT-T1 – Vertical CMOS ~100
CADT – Computer-Aided Design and... ~100
EP3C – Efficiency and Performanc... ~100
SLD – System Level Design ~100
ASCENT-T4 – Merged Logic Memory ... ~90
ASCENT-T2 – Beyond CMOS ~80
Physical Design ~80
T3S – Trustworthy and Secure Sem... ~80
E2CDA2 – E2CDA 2.0 ~70
ASCENT-T3 – Heterogeneous Integr... ~60
NEWLIMITS-T2 – 2D Materials Devi... ~60
AMML-T1 – Antiferromagnetic Magn... ~50
PMM – Packaging Materials and Me... ~50
C&S – Controls and Sensing ~40
CBRIC-T2 – Neuromorphic Fabrics ~40
ComSenTer-T3 – Application-speci... ~40
FEOL – FEOL Processes ~40
FacOps – Factory Operations ~40
Front End Processes ~40
CAPSL-T4 – Architectures and Sys... ~30
CRISP-T1 – Hardware Support for ... ~30
Materials ~30
Modeling & Simulation ~30
NEWLIMITS-T1 – Novel Computing a... ~30
Quality & Reliability ~30
ADS – Alternative Device Structu... ~20
CAPSL-T2 – P-transistors for PSL... ~20
ComSenTer-T1 – Systems and Algor... ~20
ComSenTer-T2 – mm-wave/THz ICs a... ~20
ComSenTer-T4 – Center-wide Demon... ~20
DEEP3M-T1 – Devices ~20
DEEP3M-T3 – Materials ~20
NEWLIMITS-T3 – Advanced Manufact... ~20
NEWLIMITS-T4 – Characterization ... ~20
Reliability ~20
VER – Verification ~20
DEEP3M-T2 – Circuits ~10
DEEP3M-T4 – Architectures ~10
CAPSL-T3 – Device Models and Tut... ~9
CRISP-T3 – Scaling Applications ... ~9
DesTech – Design Techniques ~9
Equip – Equipment ~9
FACSYS – Factory Systems ~9
Logic Design ~9
Modeling & TCAD ~9
PMS – Packaging Modeling and Sim... ~9
SemiSynBio – Semiconductor Synth... ~9
Semiconductor Modeling & Simulat... ~9
AdvTech – Advanced Technology ~6
CAPSL-T1 – Materials Development... ~6
CBRIC-T1 – Neuro-inspired Algori... ~6
CFM&TCM – CFM & Total Chemical M... ~6
CRISP-T2 – System Support for Ma... ~6
NEWLIMITS-T5 – Simulations and M... ~6
PS/E – Process Simplification/En... ~6
PatSys – Patterning Systems ~6
PhyDes – Physical Design ~6
Synthesis & Verification ~6
TCAD-MBPS ~6
TechCAD – Technology CAD ~6
ADA-T2 – Algorithm-driven Archit... ~3
CBRIC-T3 – Distributed Intellige... ~3
CBRIC-T4 – Application Drivers ~3
CSR – Cross-Disciplinary Semicon... ~3
DE – Design Environment ~3
DV – Design Verification ~3
MTMP – Metrology Tools Matls & P... ~3
Packaging Materials Interfaces ~3
Processes – Processes ~3
SMART-T1 – Spin-orbit Torque Mat... ~3
SMART-T2 – Ultra-Low Loss Spin W... ~3

GRC Science Area
DS – Device Sciences ~4100
IPS – Interconnect & Packaging S... ~2600
MPS – Material & Process Science... ~2400
NIS – Nanostructure & Integratio... ~1300
NMS – Nanomanufacturing Sciences ~1300
ICSS – Integrated Circuit & Syst... ~1000
CADTS – Computer Aided Design & ... ~600
MBP – Materials & Bulk Processes... ~500
PID – Process Integration & Devi... ~500
INT – Interconnect Sciences ~300
CSR – Cross-disciplinary Semicon... ~200
PKG – Packaging Sciences ~200
FAC – Factory Sciences ~100
LIT – Lithography Sciences ~100
DES – Design Sciences ~60
ESH – Environmental Safety & Hea... ~50
SMS – Semiconductor Modeling & S... ~30
ISA – Industrial Support Activit... ~3
MFGPS – Manufacturing Process Sc... ~3

1 through 30 of approximately 31,457 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>
1: pdfReport on the Development of ALD Ultrathin High-k on 2D Materials...
Dirac semimetal which has linear energy dispersion in all three dimensions in momentum space. Structure-wise, ZrTe 5 is a layered material held together by weak interlayer van der ...
URL: https://www.src.org/library/publication/p090902/p090902.pdf
Modified: 2017-05-15 - 1.1MB
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2: pdfReport on the Development of ALD Ultrathin High-k on 2D Materials...
Dirac semimetal which has linear energy dispersion in all three dimensions in momentum space. Structure-wise, ZrTe 5 is a layered material held together by weak interlayer van der ...
URL: https://www.src.org/library/publication/p090707/p090707.pdf
Modified: 2017-04-20 - 945KB
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3: pdfLarge-area Solution-grown 2D Tellurene for Air-stable, High-performanc...
Correspondence and requests for materials should be addressed to W. Z. W (wenzhuowu@purdue.edu) or P. D. Y. (yep@purdue.edu) * These authors contributed equally to this work. The ...
URL: https://www.src.org/library/publication/p092585/p092585.pdf
Modified: 2017-10-11 - 1.3MB
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4: pdfSRC Task 2656.001 Report (Peide Ye, 01/01/2016-12/31/2018)
Year 1 as the start of this project. Fig 1(a) and (b) represent the side view and top view of ZrTe 5 lattice structure. One zirconium atom and three tellurium atoms are arranged ...
URL: https://www.src.org/library/publication/p095877/p095877.pdf
Modified: 2019-02-19 - 1.2MB
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5: pdfPhysical and Electrical Characterization of Zirconium Dioxide...
Heidi - an undeserved gift from God. ii Abstract CMOS device scaling has reduced the gate insulator (currently silicon oxynitride) thickness to a point where gate leakage will ...
URL: https://www.src.org/library/publication/p009484/p009484.pdf
Modified: 2004-07-02 - 2.3MB
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6: pdfSRC/SEMATECH Center for Research in Front End Processes
High K Gate Dielectrics: Ultra-High K Gate Dielectrics Using BST...... 9 2.3 High K Gate Dielectrics: Ultra-High Gate Dielectric Materials ......
URL: https://www.src.org/library/publication/t99026/t99026.pdf
Modified: 1999-03-01 - 539KB
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7: pdfDeliverable Report: Final Report Summarizing Research Accomplishments...
... The results are summarized in Figure 1b. We observe that the interfacial layer thickness for both HfO 2 and ZrO 2 depends on the nitrato source temperature. The low bubbler ...
URL: https://www.src.org/library/publication/p005322/p005322.pdf
Modified: 2003-01-29 - 252KB
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8: pdfReport on the Demonstration of Te Homojunction TFET Operation...
Details of this 2D material properties are shown in Figure 1. Figure 1. Solution-grown large-area tellurene and material characterization. a, Atomic structure of tellurium. b, Band ...
URL: https://www.src.org/library/publication/p093476/p093476.pdf
Modified: 2018-04-27 - 492KB
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9: pdfHigh-Mobility Channels Report
Materials Integration (Task 1437.004) Deliverable: High-Mobility Channels Report Subtask Leader: Art Gossard (UCSB) Deliverable: Report on MBE synthesis of InP/GaSb/InP and InAlAs/...
URL: https://www.src.org/library/publication/p024313/p024313.pdf
Modified: 2008-08-15 - 1.1MB
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10: pdfDeliverable Report: Study on Mixture of HfO(2) and TiO(2) as...
... Three other type of films were prepared. Two of them did not use HfO 2 top layers while varying the bottom HfO 2 layer thickness. Since Pt would be used as gate electrode for these ...
URL: https://www.src.org/library/publication/p005091/p005091.pdf
Modified: 2002-12-11 - 180KB
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11: pdfDeliverable Report: Report on optimized nitrided SiO2 interface...
This task deals with the identification of interface layers for advanced gate stacks. Integration of interfacial dielectrics includes two interfaces i) the Si-dielectric interface ...
URL: https://www.src.org/library/publication/p000913/p000913.pdf
Modified: 2000-08-01 - 62KB
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12: pdfFinal Report on University of Glasgow Growth of III-V High-k...
This report summarises activity undertaken by the University of Glasgow under Task 1637.001, growth of III-V high-k gate stacks for high indium channel concentration n-channel ...
URL: https://www.src.org/library/publication/p062675/p062675.pdf
Modified: 2012-02-20 - 1.6MB
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13: pdfDeliverable Report: Combined Report on the a) structural properties...
... More dilute silicates are able to withstand higher temperatures. However the figure also shows that phase separation can still occur at high temperatures. At this point, it is ...
URL: https://www.src.org/library/publication/p005319/p005319.pdf
Modified: 2003-01-29 - 1.3MB
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14: pdfDeliverable Report: Effects of Al, N, Si Addition on Hf-Based...
Several sections have been or are being published elsewhere. III. Technical Results and Data See attached report 1 Effects of Al, N, Si Addition on Hf-based Dielectrics Abstract: ...
URL: https://www.src.org/library/publication/p008704/p008704.pdf
Modified: 2004-04-08 - 1.9MB
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15: pdfFEP Transition Research Center- Quarterly Report 3Q 2005
Sub Task Leader: Jack C. Lee Highlights: In this quarter, a new structural approach of Gd 2 O 3 incorporated HfO 2 multi-metal dielectric n-MOSFETs and their electrical ...
URL: https://www.src.org/library/publication/p013693/p013693.pdf
Modified: 2005-10-10 - 3.2MB
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16: pdfDeliverable report on diffusion from La-based interfacial layers...
Four different samples were examined in this study. The composition of the samples are diagrammed in figure 1. Samples consist of bulk silicon covered with a multi-layer stack ...
URL: https://www.src.org/library/publication/p017938/p017938.pdf
Modified: 2006-10-30 - 870KB
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17: pdfMSD: CMOS Extension: Si-Ge Devices and Structures Theme 2051...
Transport as a function of silicon cap thickness was investigated. The highest mobility devices employed a Si cap thickness of 2 nm (after device processing), with measured ...
URL: https://www.src.org/library/publication/p062154/p062154.pdf
Modified: 2011-12-19 - 816KB
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18: pdfIFC: Optical Connectivity Theme 2050.002 Q1FY2011 (11/1/11-1...
... Theme 1 of the FCRP MSD Center at MIT. Key Accomplishments (Miller Group) Reliable selective area growth of quantum wells on silicon substrates Ge and especially Ge/SiGe quantum ...
URL: https://www.src.org/library/publication/p062969/p062969.pdf
Modified: 2012-03-22 - 881KB
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19: pdfHigh-K Dielectric Issues
... The leakage current at -1.5 V was on order of 10 -2 A/cm 2 . Jack C. Lee, The University of Texas at Austin 0 5 10 -11 1 10 -10 1.5 10 -10 2 10 -10 2.5 10 -10 -3 -2.5 -2 -1.5 -1 ...
URL: https://www.src.org/library/publication/p003028/p003028.pdf
Modified: 2001-10-23 - 8.4MB
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20: pdfSubmicron Ambipolar Nanocrystalline-silicon TFTs with High-k...
Subthreshold swing decreases with smaller EOT. Similar trends are also observed for electron and hole threshold voltages (Fig. 6). Therefore, directly depositing high-κ gate ...
URL: https://www.src.org/library/publication/p063469/p063469.pdf
Modified: 2012-05-21 - 322KB
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21: pdfMSD Annual Report (9/23/03-8/31/04)
September 23, 2003 - August 31, 2004. 1.0 MSD Organization With its mission to drive the device evolution to the limits of CMOS and beyond, and to address the multiple challenges ...
URL: https://www.src.org/library/publication/p017104/p017104.pdf
Modified: 2006-08-28 - 2.3MB
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22: pdfGATE DIELECTRIC INVESTIGATIONS OF ULTRA-THIN OXIDE AND NITRIDE...
...Under the direction of Carlton M. Osburn.) As device dimensions continue to scale down into the sub-100 nm regime, there is an increasing challenge for identifying and ...
URL: https://www.src.org/library/publication/p004694/p004694.pdf
Modified: 2002-09-24 - 1.8MB
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23: pdfReport on customized interfaces for Hf, La and rare earth based...
... This approach is illustrated in Figs. 2(a) and 2(b). Figure 2(a) illustrates an interface between SiO 2 and HfO 2 , ∆(N av )~2.13, after an 800°C anneal. There is a phase ...
URL: https://www.src.org/library/publication/p011776/p011776.pdf
Modified: 2005-03-22 - 714KB
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24: pdfFinal report summarizing research accomplishments and future...
...Resolution Transmission Electron Microscopy (HRTEM). The phase identification of FUSI NiSi layer structures was determined using electron nanodiffraction analysis. After N 2 or ...
URL: https://www.src.org/library/publication/p020485/p020485.pdf
Modified: 2007-07-23 - 1.1MB
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25: pdfFinal Report on III-V MOSFET Sub-22 nm III-V MOS Transistor Developmen...
...Figure 1, left) were also commonly reported in the literature. These often have excellent short-channel effects at a given gate length, but obtain this thorough extremely large ...
URL: https://www.src.org/library/publication/p072332/p072332.pdf
Modified: 2014-10-24 - 2.7MB
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26: pdfFinal Report Summarizing Research Accomplishments on Hafnium...
... Two sets of films were produced. For the first set, which was used for all figures except 3 and 4, the substrate temperature was controlled at 250 °C and the sources were both ...
URL: https://www.src.org/library/publication/p007957/p007957.pdf
Modified: 2004-01-19 - 119KB
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27: pdfReport on position-independent uniaxial strain effects on hole...
Monte Carlo simulations. We found and explained the super- linear relations between mobility and stress at high stress regime. I. Introduction Recent experiments and theoretical ...
URL: https://www.src.org/library/publication/p014433/p014433.pdf
Modified: 2006-01-10 - 603KB
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28: pdfSRC/SEMATECH Center for Research in Front End Processes
International Technology Roadmap for Semiconductors (ITRS). The research addresses needs for advanced gate stacks, thermal processes, shallow junctions and contacts. Process ...
URL: https://www.src.org/library/publication/p000322/p000322.pdf
Modified: 2009-10-15 - 1.3MB
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29: pdfEvaluation of Ultra-Thin (<10nm) Silicon Channel Materials for...
She has been a blessing on my life in countless ways. iii TABLE OF CONTENTS Page LIST OF TABLES......vii ...
URL: https://www.src.org/library/publication/p007748/p007748.pdf
Modified: 2003-12-11 - 5.8MB
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30: pdfModeling and Performance Analysis of III-V Nanowire Field-Effect...
During the last half century, a dramatic downscaling of electronics has taken place. The miniaturization of the devices found in integrated circuits is predicted by the ...
URL: https://www.src.org/library/publication/p056276/p056276.pdf
Modified: 2010-06-07 - 541KB
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1 through 30 of approximately 31,457 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>