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ICSS – Integrated Circuit & Syst... ~1300
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IPS – Interconnect & Packaging S... ~200
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CSR – Cross-disciplinary Semicon... ~100
MBP – Materials & Bulk Processes... ~100
NMS – Nanomanufacturing Sciences ~100
DES – Design Sciences ~80
INT – Interconnect Sciences ~40
FAC – Factory Sciences ~20
PKG – Packaging Sciences ~20
ESH – Environmental Safety & Hea... ~7
LIT – Lithography Sciences ~7
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MFGPS – Manufacturing Process Sc... ~1

1 through 30 of approximately 12,252 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>
1: pdfScaling Behavior of Oxide-Based Electrothermal Threshold Switching...
The Royal Society of Chemistry 20xx J. Name., 2013, 00, 1-3 | 1 Please do not adjust margins Please do not adjust margins a. Carnegie Mellon University, Dept. of Materials Science ...
URL: https://www.src.org/library/publication/p091039/p091039.pdf
Modified: 2017-06-05 - 1.3MB
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2: pdfScaling Behavior of Oxide-based Electrothermal Threshold Switching...
Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA. 2 Dept. of Electric and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, USA. * ...
URL: https://www.src.org/library/publication/p091310/p091310.pdf
Modified: 2017-07-12 - 317KB
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3: pdfScaling Behavior of Oxide-based Electrothermal Threshold Switching...
Part of the results were presented to Micron. Li, D., et al. Scaling behavior of oxide-based electrothermal threshold switching devices, Nanoscale, 2017, DOI: 10.1039/C7NR03865H ...
URL: https://www.src.org/library/publication/p092107/p092107.pdf
Modified: 2017-09-05 - 954KB
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4: pdfElectro-Thermal Model of Threshold Switching in TaO(x)-Based...
This was done without using any adjustable fitting parameters. In the NDR region, the simulation predicted spontaneous current constriction forming a hot small- diameter conducting ...
URL: https://www.src.org/library/publication/p089850/p089850.pdf
Modified: 2016-11-21 - 570KB
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5: pdfScaling Behavior of Oxide-based Electrothermal Threshold Switching...
Goodwill et al, ACS Appl. Mater. Interfaces, 2017 C. Funck et al, Adv. Electron. Mater., 2016 Joule heating increases conductivity which increases heating in a positive feedback ...
URL: https://www.src.org/library/publication/p091789/p091789.pdf
Modified: 2017-09-19 - 1.1MB
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6: pdfON-state Evolution in Lateral and Vertical VO2 Threshold Switching...
ON-state evolution in lateral and vertical VO 2 threshold switching devices Dasheng Li 1 , Abhishek A Sharma 2 , Nikhil Shukla 3 , Hanjong Paik 4 , Jonathan M Goodwill 1 , Suman ...
URL: https://www.src.org/library/publication/p092325/p092325.pdf
Modified: 2017-09-13 - 1.4MB
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7: pdfExtremely Non-Linear Selector Devices for Cross-Point Memory...
Where can Emerging Memory fit in? DRAM NAND DISK Latency Bit/$ DRAM NAND DISK NVDRAM (Non-Volatile DRAM) § FERAM § STTMRAM DRAM NAND DISK Latency Bit/$ DRAM NAND DISK SCM ...
URL: https://www.src.org/library/publication/p090178/p090178.pdf
Modified: 2017-02-01 - 9.0MB
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8: pdfAg-HfO2 Selectors for Cross-Point Memories
... Aziz et al, SISPAD, 2017. Modeling and Simulation: Memory Technologies Spin Memories . Bipolar Write (Compatible with Ag-HfO 2 -Ag) . Low Distinguishability . HRS: 10 K . LRS: 4 K ...
URL: https://www.src.org/library/publication/p091608/p091608.pdf
Modified: 2017-08-04 - 6.3MB
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9: pdf3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors...
3160 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 10, OCTOBER 2015 3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines Haitong Li, ...
URL: https://www.src.org/library/publication/p086868/p086868.pdf
Modified: 2016-02-03 - 1.8MB
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10: pdfRecent Progress in Building Brain-Inspired Computing Systems...
... Core Top-Level Microarchitecture. The SYNAPSE unit processes all incoming spikes and reads out the associated synaptic weights from the memory. The DENDRITE unit updates the state ...
URL: https://www.src.org/library/publication/p093502/p093502.pdf
Modified: 2018-05-01 - 4.7MB
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11: pdfNeuro-Inspired Computing with Emerging Nonvolatile Memory
This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. 0018-9219 © 2018 IEEE. Personal ...
URL: https://www.src.org/library/publication/p093106/p093106.pdf
Modified: 2018-02-05 - 5.1MB
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12: pdfFilament Formation in Lateral VO2-Based Threshold Switching Devices
Nikhil Shukla, Hanjong Paik, Jonathan M. Goodwill, Suman Datta, Darrell G. Schlom, James A. Bain, and Marek Skowronski* D. Li, J. M. Goodwill, Prof. M. Skowronski Department of ...
URL: https://www.src.org/library/publication/p090089/p090089.pdf
Modified: 2017-01-12 - 394KB
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13: pdfF
The work of A. A. Balandin and G. Liu was supported in part by the National Science Foundation (NSF) through the Emerging Frontiers of Research Initiative (EFRI) 2-DARE project: ...
URL: https://www.src.org/library/publication/p092757/p092757.pdf
Modified: 2017-11-02 - 783KB
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14: pdfSTEM Video of Electronically-Driven Metal-Insulator Transitions...
Joule heating is not well understood. Here we report on imaging the MIT in situ in nanoscale, horizontally-aligned Pt/NbO 2 /Pt devices with multi-detector scanning transmission ...
URL: https://www.src.org/library/publication/p087073/p087073.pdf
Modified: 2016-02-23 - 168KB
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15: pdf
... Manuscript received June 1, 2016. This work was supported in part by the Center for Low Energy Systems Technology (LEAST) sponsored by MARCO and DARPA A. Aziz, N. Jao and S. K. ...
URL: https://www.src.org/library/publication/p088043/p088043.pdf
Modified: 2016-09-26 - 2.1MB
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16: pdfLow Sub-threshold Swing Devices and Circuits: Steep Switching...
Aziz et al, EDL 2016. NCFET: Increasing T FE Phase FETs (Negative Differential Resistance and Abrupt IMT) Shukla et al, Nature Comm, 2014 Aziz et al, TED 2017. PhaseFET 4 Key ...
URL: https://www.src.org/library/publication/p092611/p092611.pdf
Modified: 2017-10-19 - 2.6MB
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17: pdfSelf-Rectifying Resistive Memory Devices
Lee et al, Nano Lett. 9, 1476 (2009) Ni nanowire as filament at the NiO grain boundaries . Materials: NiO, TiO 2 ... . Switching type: Unipolar . Thermal-driven redox chemical ...
URL: https://www.src.org/library/publication/p063971/p063971.pdf
Modified: 2012-06-29 - 3.4MB
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18: pdfEmerging Nanodevices Update
GOALS : 1) Demonstrate low power capacitively coupled oscillator arrays (>1000 nodes) and compact spiking neurons using phase transitions which are integrated with silicon CMOS; 2) ...
URL: https://www.src.org/library/publication/p091042/p091042.pdf
Modified: 2017-06-09 - 5.5MB
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19: pdfFAME Final Research Review
... What have we accomplished in five years? (timelines) 6 Metal Insulator Transition Theory Experiment 2013 2014 2015 2016 2017  Discovery of new MITs  Alternative routes to ...
URL: https://www.src.org/library/publication/p092929/p092929.pdf
Modified: 2017-12-15 - 5.8MB
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20: pdfEmerging Steep-Slope Devices and Circuits: Opportunities and...
... There are a few different ways to achieve a steep slope. Considering a general gate controlled device in concept, the subthreshold swing SS could be described as 𝑆𝑆 ≈ ...
URL: https://www.src.org/library/publication/p088486/p088486.pdf
Modified: 2016-08-01 - 1.5MB
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21: pdfDevice and Materials Requirements for Neuromorphic Computing
Raisul Islam et al 2018 J. Phys. D: Appl. Phys. in press https://doi.org/10.1088/1361-6463/aaf784 Manuscript version: Accepted Manuscript Accepted Manuscript is "the version of the ...
URL: https://www.src.org/library/publication/p095207/p095207.pdf
Modified: 2019-01-08 - 4.0MB
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22: pdfMetal Oxide Resistive Switching Random Access Memory (RRAM) ...
Larger data bandwidth is required! SOC Consumer Portable Power Consumption Trend ITRS 2011 Edition (System Drivers) More than 50% power consumed by memory Data DRAM/HDD Bandwidth ...
URL: https://www.src.org/library/publication/p066705/p066705.pdf
Modified: 2013-06-13 - 4.3MB
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23: pdfRecent Progress of Phase Change Memory (PCM) and Resistive Switching...
... Schematic view of typical T-shape PCM. (b) Reset state and (c) set process of the PCM cell with the ATE. Adapted from Bae et al. [22]. Fig. 3 (a)-(b) shows the device structure of ...
URL: https://www.src.org/library/publication/p059823/p059823.pdf
Modified: 2011-05-12 - 527KB
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24: pdfEnergy-efficient Analog Computing with Emerging Memory Devices
... Cavigelli et al., GLVLSI'15 Origami Y.H. Chen et al., ISSCC'16 Eyeriss Envision B. Moons et al., ISSCC'17 * AlexNet performance (convolutional layers only) Still, very poor energy ...
URL: https://www.src.org/library/publication/p093189/p093189.pdf
Modified: 2018-02-27 - 5.5MB
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25: pdfPaper Title (use style: paper title)
... Design constraints also shown. See Fig. 4 for the definitions of the parameters. Fig.4 Nominal simulation parameters the selector (L) and oxide thickness of the MTJ (T OX,MTJ ) on ...
URL: https://www.src.org/library/publication/p086878/p086878.pdf
Modified: 2016-02-15 - 1.1MB
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26: pdfModeling Resistive Switching Materials and Devices Across Scales
Modeling resistive switching materials and devices across scales Stefano Ambrogio Dipartimento di Elettronica, Informazione e Bioingegneria, Italian Universities Nanoelectronics ...
URL: https://www.src.org/library/publication/p090120/p090120.pdf
Modified: 2017-01-19 - 1.2MB
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27: pdfOperando Imaging of RRAM
What does this have to do with the ALS? . Some in situ/operando techniques may be portable: EM X-ray . Many challenging open problems . Semiconductor industry extremely ...
URL: https://www.src.org/library/publication/p092820/p092820.pdf
Modified: 2017-11-10 - 14.0MB
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28: pdfNVSim: A Circuit-Level Performance, Energy, and Area Model for...
2 NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-Volatile Memory Yuan Xie, Xiangyu Dong, Cong Xu Abstract-Various new non-volatile memory (NVM) ...
URL: https://www.src.org/library/publication/p060507/p060507.pdf
Modified: 2011-06-27 - 249KB
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29: pdfTheme 3: Transduction FETs
Theme 3: Transduction FETs Professor, University of Notre Dame Suman Datta LEAST 4 th Annual PI Meeting, Notre Dame, IN, Aug 10, 2016 1 sda&a@nd.edu sdatta@nd.edu SS ≈ ln10 1 V ...
URL: https://www.src.org/library/publication/p088525/p088525.pdf
Modified: 2016-08-11 - 22.4MB
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30: pdfEnergy-efficient Analog Computing with Emerging Memory Devices
Models evolved towards deeper & leaner topologies with optimal (e.g. 1D filters) connectivity - More focus now on model / hardware codesign 4 Canziani & Culurciello, An Analysis of ...
URL: https://www.src.org/library/publication/p093207/p093207.pdf
Modified: 2018-03-02 - 4.5MB
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1 through 30 of approximately 12,252 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>