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P2000

Published by PTO

nCORE

Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated Circuits (ICS)

Mengwei Si (Purdue); Peide Ye (Purdue)
Published by Patent Office
Application Type: Utility

P2004

Published by PTO

nCORE

Cerium-Doped Ferroelectric Materials and Related Devices and Methods

John Baniecki (Stanford); Paul C. McIntyre (Stanford); Balreen Saini (Stanford); Wilman Tsai (Stanford); Yujo Zhouchangwan (Stanford)
Published by Patent Office
Application Type: Utility

P2088

Published by PTO

nCORE

Integrated Circuit With Topological Semimetal Interconnect

Judy J. Cha (Yale); Hyeuk Jin Han (Yale)
Published by Patent Office
Application Type: Utility

P1975

Published by PTO

nCORE

Low-Power Phase Change Memory Technology with Interfacial Thermoelectric Heating Enhancement

Mehdi Asheghi-Roudheni (Stanford); Kenneth E. Goodson (Stanford); Raisul Islam (Stanford); Asir Intisar Khan (Stanford); Heungdong Kwon (Stanford); Eric Pop (Stanford); H.-S. Philip Wong (Stanford)
Published by Patent Office
Application Type: Utility

P2035

Published by PTO

nCORE

Novel Nanocomposite Phase-Change Memory Materials and Design and Selection of the Same

Aaron Kusne (NIST); Mo Li (Univ. of Minnesota); Ichiro Takeuchi (UM/College Park); Changming Wu (Univ. of Washington); Heshan Yu (UM/College Park)
Published by Patent Office
Application Type: Utility

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	IRP	India Research Program

Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated Circuits (ICS)

Cerium-Doped Ferroelectric Materials and Related Devices and Methods

Integrated Circuit With Topological Semimetal Interconnect

Low-Power Phase Change Memory Technology with Interfacial Thermoelectric Heating Enhancement

Novel Nanocomposite Phase-Change Memory Materials and Design and Selection of the Same

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	CNFD	Center for NanoFerroic Devices 2013–2019
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