Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene

• Application Type:

  Utility

  Patent Number:

  8198707

  Country:

  United States

  Status:

  Filed on 22-Jan-2009, Issued on 12-Jun-2012, Patent Abandoned

  Organization:

  University of Texas at Austin

  SRC Filing ID:

  P1099

Inventors

• Luigi Colombo (TI)
• Seyoung Kim (UT/Austin)
• Sanjay K. Banerjee (UT/Austin)
• Emanuel Tutuc (UT/Austin)