GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME

    • Application Type:
      Utility
      Patent Number:
      9905647
      Country:
      United States
      Status:
      Filed on 28-Oct-2015, Issued on 27-Feb-2018
      Organization:
      University of Notre Dame
      SRC Filing ID:
      P1559

    Inventors

    • Patrick Fay (Univ. of Notre Dame)
    • Wenjun Li (Univ. of Notre Dame)
    • Debdeep Jena (Univ. of Notre Dame)

    Related Patents

    P1603
    Issued
    STARnet

    III-N Heterojunction nanowire tunneling field effect transistors

    Patrick Fay (Univ. of Notre Dame); Debdeep Jena (Univ. of Notre Dame); Wenjun Li (Univ. of Notre Dame)
    Patent Issued (on 24-Apr-2018)
    Application Type: Continuation

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