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GRC Science Area
MBP – Materials & Bulk Processes Sciences
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| 1 through 12 of
12 similar documents, best matches first. |
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- 1:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
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- 2:
Selective Germanium Deposition on Silicon and Resulting Structures...
- Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB
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- 3:
Selective Germanium Deposition on Silicon and Resulting Structures...
- Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5089872 Country: United States Status: Filed on 27-Apr-1990, Issued on ...
URL: https://www.src.org/library/patent/p0101/
Modified: 1992-02-18 - 22KB
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- 4:
Deposition of Germanium Thin Films on Silicon Dioxide Employing...
- Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB
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- 5:
Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
- Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
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- 6:
Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge...
- Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge Heating Means Application Type: Utility Patent Number: 5418885 Country: United States Status: Filed on 29-Dec-1992, ...
URL: https://www.src.org/library/patent/p0040/
Modified: 1995-05-23 - 22KB
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- 7:
Method for Forming a Layer of Uniform Thickness On a Semiconductor...
- Method for Forming a Layer of Uniform Thickness On a Semiconductor Wafer During Rapid Thermal Processing Application Type: Utility Patent Number: 5439850 Country: United States ...
URL: https://www.src.org/library/patent/p0033/
Modified: 1995-08-08 - 21KB
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- 8:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 9:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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- 10:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 11:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 12:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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