Questions?
[x] Content Type
Patent Filings
[x] Center
ASCENT
SRC Program
JUMP 2
Thrust/Theme
ASCENT-T2 – Beyond CMOS 1
ASCENT-T4 – Merged Logic Memory ... 1
1 through 2 of 2 similar documents, best matches first.   
1: Ferroelectric Circuit for Non-Volatile High-Performance Memory...
Ferroelectric Circuit for Non-Volatile High-Performance Memory Application Type: Utility Country: United States Status: Filed on 8-Dec-2022, Published by Patent Office ...
URL: https://www.src.org/library/patent/p2054/
Modified: 2022-12-08 - 23KB
Find Similar Documents
2: Magnetic Memory Structures Using Electric-Field Controlled Interlayer...
Magnetic Memory Structures Using Electric-Field Controlled Interlayer Exchange Coupling (IEC) for Magnetization Switching Application Type: Utility Patent Number: 10964468 Country: ...
URL: https://www.src.org/library/patent/p1828/
Modified: 2021-03-30 - 24KB
Find Similar Documents