Ferroelectric Circuit for Non-Volatile High-Performance Memory

    • Application Type:
      Utility
      Country:
      United States
      Status:
      Filed on 8-Dec-2022, Published by Patent Office
      Organization:
      Georgia Institute of Technology
      SRC Filing ID:
      P2054

    Inventors

    • Asif I. Khan (Georgia Tech)
    • Winston Chern (Georgia Tech)
    • Yuan-Chun Luo (Georgia Tech)
    • Nujhat Tasneem (Georgia Tech)
    • Zheng Wang (Georgia Tech)
    • Shimeng Yu (Georgia Tech)

    Related Patents

    P2061
    Application Expired
    JUMP

    Ferroelectric Circuit for Non-Volatile High-Performance Memory

    Winston Chern (Georgia Tech); Asif I. Khan (Georgia Tech); Yuan-Chun Luo (Georgia Tech); Nujhat Tasneem (Georgia Tech); Zheng Wang (Georgia Tech); Shimeng Yu (Georgia Tech)
    Patent Application Expired
    Application Type: Provisional

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