Questions?
[x] Content Type
Patent Filings

[x] SRC Program
nCORE

Center
NEWLIMITS 3

Thrust/Theme
NEWLIMITS-T1 – Novel Computing a... 1
NEWLIMITS-T2 – 2D Materials Devi... 1
NEWLIMITS-T4 – Characterization ... 1

1 through 3 of 3 similar documents, best matches first.   
1: Valley Spin Hall Effect Based Non-Volatile Memory (Patent P1912...
Valley Spin Hall Effect Based Non-Volatile Memory Application Type: Utility Patent Number: 11250896 Country: United States Status: Filed on 24-Dec-2020, Issued on 15-Feb-2022 ...
URL: https://www.src.org/library/patent/p1912/
Modified: 2022-02-15 - 25KB
Find Similar Documents
2: Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB
Find Similar Documents
3: Converting Ta- and Ti-Based Cu Diffusion Barriers into their...
Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness Application Type: ...
URL: https://www.src.org/library/patent/p1824/
Modified: 2022-03-29 - 22KB
Find Similar Documents