Questions?
[x] Content Type
Patent Filings

[x] Thrust/Theme
Doping Technologies

SRC Program
GRC 6

GRC Science Area
MBP – Materials & Bulk Processes... 6
MIC – Microstructure Sciences 5
PID – Process Integration & Devi... 5
NMS – Nanomanufacturing Sciences 3
DS – Device Sciences 2
MFGPS – Manufacturing Process Sc... 1
MPS – Material & Process Science... 1

1 through 6 of 6 similar documents, best matches first.   
1: Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
Find Similar Documents
2: Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge...
Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge Heating Means Application Type: Utility Patent Number: 5418885 Country: United States Status: Filed on 29-Dec-1992, ...
URL: https://www.src.org/library/patent/p0040/
Modified: 1995-05-23 - 22KB
Find Similar Documents
3: Selective Germanium Deposition on Silicon and Resulting Structures...
Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB
Find Similar Documents
4: Selective Germanium Deposition on Silicon and Resulting Structures...
Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5089872 Country: United States Status: Filed on 27-Apr-1990, Issued on ...
URL: https://www.src.org/library/patent/p0101/
Modified: 1992-02-18 - 22KB
Find Similar Documents
5: Deposition of Germanium Thin Films on Silicon Dioxide Employing...
Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB
Find Similar Documents
6: Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
Find Similar Documents
1 through 6 of 6 similar documents, best matches first.