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- 1: RF High-Electron-Mobiilty Transistors Including Group III-N Stress...
- RF High-Electron-Mobiilty Transistors Including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages Application Type: Utility Patent Number: 11710785 Country: ...
URL: https://www.src.org/library/patent/p1864/
Modified: 2023-07-23 - 23KB
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