RF High-Electron-Mobiilty Transistors Including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages

• Application Type:

  Utility

  Patent Number:

  11710785

  Country:

  United States

  Status:

  Filed on 4-Jun-2020, Issued on 23-Jul-2023

  Organization:

  Cornell University

  SRC Filing ID:

  P1864

Inventors

• Austin Hickman (Cornell)
• Reet Chaudhuri (Cornell)

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