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- 1:
RF High-Electron-Mobiilty Transistors Including Group III-N Stress...
- RF High-Electron-Mobiilty Transistors Including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages Application Type: Utility Patent Number: 11710785 Country: ...
URL: https://www.src.org/library/patent/p1864/
Modified: 2023-07-23 - 23KB Find Similar Documents
- 2:
Semiconductor Research Corporation - SRC
- JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB Find Similar Documents
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