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GRC Science Area
MPS – Material & Process Sciences
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1 through 13 of
13 similar documents, best matches first. |
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- 1:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
- 2:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 3:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 4:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB Find Similar Documents
- 5:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB Find Similar Documents
- 6:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB Find Similar Documents
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Surface Modifcation of CVD Polymer Films (Patent P0591) - SRC
- Surface Modifcation of CVD Polymer Films Application Type: Utility Patent Number: 7501154 Country: United States Status: Filed on 18-Feb-2005, Issued on 10-Mar-2009 Organization: ...
URL: https://www.src.org/library/patent/p0591/
Modified: 2009-03-10 - 22KB Find Similar Documents
- 8:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB Find Similar Documents
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Polyelectrolyte Nanolayers as Diffusion Barriers In Semiconductor...
- Polyelectrolyte Nanolayers as Diffusion Barriers In Semiconductor Devices Application Type: Utility Patent Number: 7081674 Country: United States Status: Filed on 11-Jun-2004, ...
URL: https://www.src.org/library/patent/p0466/
Modified: 2006-07-25 - 22KB Find Similar Documents
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Growth of Inorganic Thin Films using Self-Assembled Monolayers...
- Growth of Inorganic Thin Films using Self-Assembled Monolayers as Nucleation Sites Application Type: Utility Patent Number: 7829150 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1139/
Modified: 2010-11-09 - 22KB Find Similar Documents
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Self-Assembled Sub-Nanolayers as Interfacial Adhesion Enhancers...
- Self-Assembled Sub-Nanolayers as Interfacial Adhesion Enhancers and Diffusion Barriers Application Type: Utility Patent Number: 7026716 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0415/
Modified: 2006-04-11 - 22KB Find Similar Documents
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Oxidation Resistant High Conductivity Copper Layers For Microelectroni...
- Oxidation Resistant High Conductivity Copper Layers For Microelectronic Applications and Process of Making Same Application Type: Divisional Patent Number: 5959358 Country: United ...
URL: https://www.src.org/library/patent/p0054/
Modified: 1999-09-28 - 24KB Find Similar Documents
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Passivated Copper Conductive Layers for Microelectronic Applications...
- Passivated Copper Conductive Layers for Microelectronic Applications and Methods of Manufacturing Same Application Type: Utility Patent Number: 5766379 Country: United States ...
URL: https://www.src.org/library/patent/p0015/
Modified: 1998-06-16 - 24KB Find Similar Documents
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13 similar documents, best matches first. |
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