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Thrust/Theme
NEM – Nanoengineered Materials
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- 1:
NMS Nanoengineered Materials Annual Review (Event E004780) -...
- NMS Nanoengineered Materials Annual Review Date: Tuesday, June 12, 2012 - Wednesday, June 13, 2012 Location: Dean's Suite 290, College of Business, 1307 West Highland St., ...
URL: https://www.src.org/calendar/e004780/
Modified: 2012-12-13 - 57KB
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- 2:
 NMS Patterning Review Agenda
- NMS Patterning Review Agenda Date: Tuesday, October 4, 2011 - Thursday, October 6, 2011 Location: The Solution Center, Durham, NC 27703 Tuesday, October 4, 2011 7:30 - 8:30 a.m. ...
URL: https://www.src.org/calendar/e004187/e004187-agenda.pdf
Modified: 2011-09-22 - 44KB
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- 3:
Graphene Formation on Dielectrics and Electronic Devices formed...
- Graphene Formation on Dielectrics and Electronic Devices formed Therefrom Application Type: Patent Cooperation Treaty Patent Number: PCT/US2011/066 Status: Filed on 21-Dec-2011, ...
URL: https://www.src.org/library/patent/p1370/
Modified: 2013-09-06 - 24KB
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- 4:
Graphene Formation on Dielectrics and Electronic Devices Formed...
- Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom Application Type: Utility Patent Number: 8685802 Country: United States Status: Filed on 29-Dec-2010, ...
URL: https://www.src.org/library/patent/p1264/
Modified: 2014-04-01 - 25KB
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- 5:
August 2011 Patterning Review Agenda
- GRC Patterning Review Agenda Date: Wednesday, August 24, 2011 - Thursday, August 25, 2011 Location: 540 A/B Cory Hall, UC-Berkeley Campus, Berkeley, CA Wednesday, August 24, 2011 ...
URL: https://www.src.org/calendar/e004185/061011-agenda.pdf
Modified: 2011-06-10 - 67KB
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- 6:
Graphene Field Effect Transistor (Patent P1379) - SRC
- Graphene Field Effect Transistor Application Type: Utility Patent Number: 9748340 Country: United States Status: Filed on 22-Mar-2012, Issued on 29-Aug-2017 Organization: ...
URL: https://www.src.org/library/patent/p1379/
Modified: 2017-08-29 - 24KB
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- 7:
GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC...
- GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS Application Type: Divisional Patent Number: 8338825 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1311/
Modified: 2012-12-25 - 24KB
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- 8:
Direct Graphene Growth on Metal Oxides by Molecular Epitaxy ...
- Direct Graphene Growth on Metal Oxides by Molecular Epitaxy Application Type: Utility Patent Number: 9624600 Country: United States Status: Filed on 6-Dec-2012, Issued on ...
URL: https://www.src.org/library/patent/p1387/
Modified: 2017-04-18 - 23KB
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- 9:
Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation...
- Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures Application Type: Patent Cooperation Treaty Patent Number: PCT/US12/46621 Status: ...
URL: https://www.src.org/library/patent/p1382/
Modified: 2015-07-07 - 24KB
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- 10:
Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic...
- Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications Application Type: Utility Patent Number: 8158200 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1170/
Modified: 2012-04-17 - 24KB
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- 11:
Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic...
- Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic Device Applications Application Type: Continuation Patent Number: 8946692 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1500/
Modified: 2015-02-03 - 24KB
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- 12:
Magneto-Electric Voltage Controlled Spin Transistors (Patent...
- Magneto-Electric Voltage Controlled Spin Transistors Application Type: Utility Patent Number: 9379232 Country: United States Status: Filed on 18-Feb-2014, Issued on 28-Jun-2016 ...
URL: https://www.src.org/library/patent/p1469/
Modified: 2016-06-28 - 27KB
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