Overview

The South West Academy of Nanoelectronics (SWAN) center, led by the University of Texas at Austin, includes members from UT-Dallas, Texas A&M, Rice, the University of Maryland and North Carolina State.

Currently the Bilayer Pseuodospin Field Effect Transistor (BiSFET) appears to be one of the promising devices in the NRI repertoire in terms of power consumption and speed. SWAN has established a synergistic program involving theory and experiment to work on graphene-based BiSFETs, and related concepts. We will try to determine theoretically and experimentally if the Bose condensate postulated in gated, coupled bilayer graphene systems can survive at room temperature. We will have significant efforts in graphene materials synthesis, gate dielectrics on graphene, ohmic contacts to graphene and process integration which should have an impact on other related graphene based devices also.  For instance, we will explore device concepts based on single particle, bare 2D-to-2D tunneling in the gated coupled graphene bilayers systems. We will study circuit and architecture challenges related to the BiSFET in logic, memory and analog/mixed signal applications.

Research Focus

The SWAN Center focuses on ten theme areas:

• Estimate of Tc in Bilayer Graphene
• BiSFET and Related Device Modeling
• Experiments towards the BISFET, and 2D-2D tunneling devices in graphene bilayers
• New Synthetic Routes to Graphene and hBN
• Circuit and Architecture Issues Related to BiSFETs
• Development of Metal Contacts for Graphene
• Development of Dielectrics for Graphene
• High resolution TEM of grown graphene layers & graphene-based devices
• Thermal Transport in BiSFETs and Related Nanoscale Structures
• Exploration of Novel Atomically Thin 2D Dielectric Materials for Graphene Electronics

Center Management

Center Director:
Sanjay Banerjee /UT Austin

Center Operations Director:
Frank Register /UT Austin

Center Industry Assignees:
Mark Doczy (Intel)/UT Austin
Gary Carpenter (IBM)/UT Austin
Luigi Colombo (TI)/UT Austin