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Thrust/Theme
Advanced Devices & Technologies
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| 1 through 7 of
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- 1:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0334...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: Foreign National Patent Number: 139204 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 17-Dec-2001 ...
URL: https://www.src.org/library/patent/p0334/
Modified: 2001-12-17 - 23KB
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- 2:
Cyclic Anneal for Dislocation Reduction (Patent P0255) - SRC
- Cyclic Anneal for Dislocation Reduction Application Type: Utility Patent Number: 6635110 Country: United States Status: Filed on 23-Jun-2000, Issued on 21-Oct-2003 Organization: ...
URL: https://www.src.org/library/patent/p0255/
Modified: 2003-10-21 - 23KB
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- 3:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0335...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: European Patent Office Patent Number: 1192646 Status: Filed on 23-Jun-2000, Issued on 13-Aug-2008 Organization: ...
URL: https://www.src.org/library/patent/p0335/
Modified: 2008-08-13 - 23KB
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- 4:
Oxidation of silicon on germanium (Patent P0250) - SRC
- Oxidation of silicon on germanium Application Type: Utility Patent Number: 6352942 Country: United States Status: Filed on 25-Jun-1999, Issued on 5-Mar-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0250/
Modified: 2002-03-05 - 23KB
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- 5:
Oxidation of silicon on germanium (Patent P0330) - SRC
- Oxidation of silicon on germanium Application Type: Foreign National Patent Number: 154359 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 15-Aug-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0330/
Modified: 2002-08-15 - 23KB
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- 6:
Optoelectronic Integrated Circuits Having Polycrystalline Silicon...
- Optoelectronic Integrated Circuits Having Polycrystalline Silicon Waveguides Therein Application Type: Divisional Patent Number: 6108464 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0094/
Modified: 2000-08-22 - 26KB
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- 7:
Methods of Forming Features of Integrated Circuits Using Modified...
- Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB
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