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GRC Science Area
MPS – Material & Process Sciences
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- 1:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 2:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB
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- 3:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB
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- 4:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - device claims Application Type: Utility Patent Number: 6855994 Country: United States Status: Filed on 5-Sep-2001, ...
URL: https://www.src.org/library/patent/p0259/
Modified: 2005-02-15 - 26KB
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- 5:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - Method claims Application Type: Utility Patent Number: 6753229 Country: United States Status: Filed on 24-Nov-1999, ...
URL: https://www.src.org/library/patent/p0086/
Modified: 2004-06-22 - 26KB
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- 6:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation Application Type: Foreign National Patent Number: NI154458 Country: Taiwan Status: Filed on 1-Dec-1999, Issued on ...
URL: https://www.src.org/library/patent/p0211/
Modified: 2003-05-07 - 26KB
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- 7:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB
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- 8:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB
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- 9:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate Application Type: Utility Patent Number: 5242847 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0132/
Modified: 1993-09-07 - 21KB
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- 10:
Systems, Methods and Computer Program Products for Detecting...
- Systems, Methods and Computer Program Products for Detecting the Position of a New Alignment Mark on a Substrate Based on Fitting to Sample Alignment Signals Application Type: ...
URL: https://www.src.org/library/patent/p0047/
Modified: 2000-05-16 - 22KB
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