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GRC Science Area
NIS – Nanostructure & Integration Sciences
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| 1 through 7 of
7 similar documents, best matches first. |
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- 1:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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- 2:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 3:
Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...
- Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB
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- 4:
High Mobility Heterojunction Transistor and Method (Patent P0208...
- High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB
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- 5:
High Mobility Heterojunction Transistor and Method (Patent P0083...
- High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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- 6:
P-I-N MOSFET for ULSI Applications (Patent P0037) - SRC
- P-I-N MOSFET for ULSI Applications Application Type: Utility Patent Number: 5432366 Country: United States Status: Filed on 8-May-1993, Issued on 11-Jul-1995, Patent Expired ...
URL: https://www.src.org/library/patent/p0037/
Modified: 1995-07-11 - 21KB
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- 7:
Methods of Fabricating Strained Semiconductor-On-Insulator Field...
- Methods of Fabricating Strained Semiconductor-On-Insulator Field-Effect Transistors And Related Devices Application Type: Utility Patent Number: 7211458 Country: United States ...
URL: https://www.src.org/library/patent/p0523/
Modified: 2007-05-01 - 22KB
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7 similar documents, best matches first. |
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