Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer

• Application Type:

  Utility

  Patent Number:

  6313487

  Country:

  United States

  Status:

  Filed on 15-Jun-2000, Issued on 6-Nov-2001

  Organization:

  University of Texas at Austin

  SRC Filing ID:

  P0091

Inventors

• David L. Kencke (UT/Austin)
• Sanjay K. Banerjee (UT/Austin)