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- 1:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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- 2:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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- 3:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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- 4:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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- 5:
Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
- Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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