Micron Scale Tin Oxide-Based Semiconductor Devices

    • Application Type:
      Utility
      Patent Number:
      11217700
      Country:
      United States
      Status:
      Filed on 6-Dec-2019, Published by Patent Office
      Organization:
      Cornell University
      SRC Filing ID:
      P1886

    Inventor

    • Jisung Park (Cornell)

    Related Patents

    P1878
    Application Expired
    JUMP

    RIE Etching of BaSnO3 for Making Micrometer-scale High-mobility Field-effect Transistor

    Jisung Park (Cornell)
    Patent Application Expired
    Application Type: Provisional
    P1879
    Published by PTO
    JUMP

    Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides

    Jisung Park (Cornell)
    Published by Patent Office
    Application Type: Utility
    P1946
    Published by PTO
    JUMP

    Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides

    Jisung Park (Cornell)
    Published by Patent Office
    Application Type: Continuation
    P2041
    Published by PTO
    JUMP

    Micron Scale Tin Oxide-Based Semiconductor Devices

    Jisung Park (Cornell)
    Published by Patent Office
    Application Type: Continuation

    INFORMATION

    FOR MEMBERS

    SRC VALUE

    ACADEMIA

    4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

    © 2024 by Semiconductor Research Corporation ®
    Access to information on this website may be limited to member companies,
    participating agencies, and qualified researchers.

    Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.