Hybrid Charge Trap Transistor-MRAM Memory Devices

    • Application Type:
      Utility
      Patent Number:
      11328757
      Country:
      United States
      Status:
      Filed on 23-Oct-2020, Issued on 10-May-2022
      Organization:
      University of Minnesota
      SRC Filing ID:
      P1951

    Inventors

    • Jian-Ping Wang (Univ. of Minnesota)
    • Protyush Sahu (Univ. of Minnesota)

    Related Patents

    P1894
    Application Expired
    JUMP

    Hybrid Charge Trap Transistor-MRAM Memory Devices

    Protyush Sahu (Univ. of Minnesota); Jian-Ping Wang (Univ. of Minnesota)
    Patent Application Expired
    Application Type: Provisional

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