Questions?
[x] Center
ASCENT

Content Type
Patent Filings 5
Other 1

SRC Program
JUMP 6

Thrust/Theme
ASCENT-T1 – Vertical CMOS 6
ADA-T1 – Deft Development 1
ADA-T2 – Algorithm-driven Archit... 1
ADA-T3 – Technology-driven Syste... 1
ASCENT-T2 – Beyond CMOS 1
ASCENT-T3 – Heterogeneous Integr... 1
ASCENT-T4 – Merged Logic Memory ... 1
CBRIC-T1 – Neuro-inspired Algori... 1
CBRIC-T2 – Neuromorphic Fabrics 1
CBRIC-T3 – Distributed Intellige... 1
CBRIC-T4 – Application Drivers 1
CONIX-T1 – ARENA Integrator 1
CONIX-T2 – Hardware/Software Pla... 1
CONIX-T3 – Security 1
CONIX-T4 – Machine Learning 1
CONIX-T5 – Communication Positio... 1
CONIX-T6 – Programming and Resou... 1
CRISP-T1 – Hardware Support for ... 1
CRISP-T2 – System Support for Ma... 1
CRISP-T3 – Scaling Applications ... 1
ComSenTer-T1 – Systems and Algor... 1
ComSenTer-T2 – mm-wave/THz ICs a... 1
ComSenTer-T3 – Application-speci... 1
ComSenTer-T4 – Center-wide Demon... 1
JUMP-URI – JUMP Undergraduate Re... 1

1 through 6 of 6 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
Find Similar Documents
2: Low-Temperature Deposition of High-Quality Aluminum Nitride Films...
Low-Temperature Deposition of High-Quality Aluminum Nitride Films for Heat Spreading Applications Application Type: Utility Country: United States Status: Filed on 8-Feb-2021, ...
URL: https://www.src.org/library/patent/p1895/
Modified: 2021-02-08 - 29KB
Find Similar Documents
3: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
Find Similar Documents
4: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
Find Similar Documents
5: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
Find Similar Documents
6: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
Find Similar Documents
1 through 6 of 6 similar documents, best matches first.