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- 1:
Valley Spin Hall Effect Based Non-Volatile Memory (Patent P1912...
- Valley Spin Hall Effect Based Non-Volatile Memory Application Type: Utility Patent Number: 11250896 Country: United States Status: Filed on 24-Dec-2020, Issued on 15-Feb-2022 ...
URL: https://www.src.org/library/patent/p1912/
Modified: 2022-02-15 - 25KB Find Similar Documents
- 2:
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
- Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB Find Similar Documents
- 3:
Converting Ta- and Ti-Based Cu Diffusion Barriers into their...
- Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness Application Type: ...
URL: https://www.src.org/library/patent/p1824/
Modified: 2022-03-29 - 22KB Find Similar Documents
- 4:
NEWLIMITS Annual Review - Device Session Student Poster Presentations...
- NEWLIMITS Center Review Student Posters We're excited to share the virtual student poster sessions with you. Please scroll below to browse videos of students speaking to their ...
URL: https://www.src.org/calendar/e007031/ncore_session_1/
Modified: 2020-07-06 - 23KB Find Similar Documents
- 5:
Semiconductor Research Corporation - SRC
- nCORE nCORE Nanoelectronic Computing Research Explore fundamental materials, devices, and interconnect solutions to enable future computing and storage paradigms beyond ...
URL: https://www.src.org/program/ncore/
Modified: 2023-10-10 - 30KB Find Similar Documents
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