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- 1:
Bi-Layer Pseudo-Spin-Field-Effect Transistor (Patent P1174) ...
- Bi-Layer Pseudo-Spin-Field-Effect Transistor Application Type: Utility Patent Number: 8188460 Country: United States Status: Filed on 24-Nov-2009, Issued on 29-May-2012, Patent ...
URL: https://www.src.org/library/patent/p1174/
Modified: 2012-05-29 - 23KB
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- 2:
Bi-layer Pseudo-Spin Field-Effect Transistor (Patent P1347) ...
- Bi-layer Pseudo-Spin Field-Effect Transistor Application Type: Divisional Patent Number: 8263967 Country: United States Status: Filed on 1-May-2012, Issued on 11-Sep-2012, Patent ...
URL: https://www.src.org/library/patent/p1347/
Modified: 2012-09-11 - 23KB
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- 3:
Topological Insulator-Based Field-Effect Transistor (Patent P1271...
- Topological Insulator-Based Field-Effect Transistor Application Type: Utility Patent Number: 8629427 Country: United States Status: Filed on 29-Apr-2011, Issued on 14-Jan-2014, ...
URL: https://www.src.org/library/patent/p1271/
Modified: 2014-01-14 - 22KB
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- 4:
Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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- 5:
Transistor That Employs Collective Magnetic Effects Thereby Providing...
- Transistor That Employs Collective Magnetic Effects Thereby Providing Improved Energy Efficiency Application Type: Utility Patent Number: 9825218 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1535/
Modified: 2017-11-21 - 22KB
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- 6:
Establishing a Uniformly Thin Dielectric Layer on Graphene in...
- Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene Application Type: Utility Patent Number: 8198707 ...
URL: https://www.src.org/library/patent/p1099/
Modified: 2012-06-12 - 21KB
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- 7:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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