Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection

    • Application Type:
      Utility
      Patent Number:
      9741416
      Country:
      United States
      Status:
      Filed on 12-Sep-2016, Issued on 22-Aug-2017
      Organization:
      University of Texas/Dallas
      SRC Filing ID:
      P1609

    Inventors

    • Christopher Hinkle (UT/Dallas)
    • Massimo V. Fischetti (UT/Dallas)
    • William G. Vandenberghe (UT/Dallas)

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