Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection

• Application Type:

  Utility

  Patent Number:

  9741416

  Country:

  United States

  Status:

  Filed on 12-Sep-2016, Issued on 22-Aug-2017

  Organization:

  University of Texas at Dallas

  SRC Filing ID:

  P1609

Inventors

• Christopher Hinkle (UT/Dallas)
• Massimo V. Fischetti (UT/Dallas)
• William G. Vandenberghe (UT/Dallas)