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Patent Filings
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- 1:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 2:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 3:
Method of Fabricating a Self-Aligned High Speed MOSFET Device...
- Method of Fabricating a Self-Aligned High Speed MOSFET Device Application Type: Continuation (in part) Patent Number: 5599728 Country: United States Status: Filed on 28-Oct-1994, ...
URL: https://www.src.org/library/patent/p0006/
Modified: 1997-02-04 - 22KB
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- 4:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 5:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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- 6:
Valley Spin Hall Effect Based Non-Volatile Memory (Patent P1912...
- Valley Spin Hall Effect Based Non-Volatile Memory Application Type: Utility Patent Number: 11250896 Country: United States Status: Filed on 24-Dec-2020, Issued on 15-Feb-2022 ...
URL: https://www.src.org/library/patent/p1912/
Modified: 2022-02-15 - 25KB
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- 7:
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
- Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB
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- 8:
Strontium Oxide as a Tunnel Barrier for Spin Injection and Giant...
- Strontium Oxide as a Tunnel Barrier for Spin Injection and Giant Spin Accumulation Application Type: Utility Patent Number: 10134979 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1693/
Modified: 2018-11-20 - 24KB
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- 9:
Spin-Based Logic Device (Patent P1496) - SRC
- Spin-Based Logic Device Application Type: Utility Patent Number: 9240799 Country: United States Status: Filed on 4-Nov-2014, Issued on 19-Jan-2016, Patent Abandoned Organization: ...
URL: https://www.src.org/library/patent/p1496/
Modified: 2016-01-19 - 22KB
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- 10:
Graphene Based Thermal Interface Materials and Methods of Manufacturin...
- Graphene Based Thermal Interface Materials and Methods of Manufacturing the Same Application Type: Utility Patent Number: 9716299 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1463/
Modified: 2017-07-25 - 23KB
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