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Patent Filings 5
Events 1
Other 1

SRC Program
JUMP 7

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2019 1

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ASCENT-T1 – Vertical CMOS 5
ASCENT-T2 – Beyond CMOS 2
CBRIC-T1 – Neuro-inspired Algori... 2
ADA-T1 – Deft Development 1
ADA-T2 – Algorithm-driven Archit... 1
ADA-T3 – Technology-driven Syste... 1
ASCENT-T3 – Heterogeneous Integr... 1
ASCENT-T4 – Merged Logic Memory ... 1
CBRIC-T2 – Neuromorphic Fabrics 1
CBRIC-T3 – Distributed Intellige... 1
CBRIC-T4 – Application Drivers 1
CONIX-T1 – ARENA Integrator 1
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CONIX-T3 – Security 1
CONIX-T4 – Machine Learning 1
CONIX-T5 – Communication Positio... 1
CONIX-T6 – Programming and Resou... 1
CRISP-T1 – Hardware Support for ... 1
CRISP-T2 – System Support for Ma... 1
CRISP-T3 – Scaling Applications ... 1
ComSenTer-T1 – Systems and Algor... 1
ComSenTer-T2 – mm-wave/THz ICs a... 1
ComSenTer-T3 – Application-speci... 1
ComSenTer-T4 – Center-wide Demon... 1
JUMP-URI – JUMP Undergraduate Re... 1

1 through 7 of 7 similar documents, best matches first.   
1: Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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2: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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3: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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4: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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5: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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6: Bio - Kaushik Roy - SRC
Bio: Kaushik Roy Kaushik Roy Kaushik Roy received B.Tech. degree in electronics and electrical communications engineering from the Indian Institute of Technology, Kharagpur, India, ...
URL: https://www.src.org/calendar/e006797/kaushik-roy-bio/
Modified: 2019-05-07 - 20KB
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7: Semiconductor Research Corporation - SRC
JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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1 through 7 of 7 similar documents, best matches first.