Questions?
[x] GRC Science Area
PID – Process Integration & Device Sciences

[x] Thrust/Theme
Doping Technologies

Content Type
Patent Filings 5
Other 1

SRC Program
GRC 6

Center
ACE4S 1
CAIST 1
CDADIC 1
CEMPI 1
CHIRP 1
EBSM 1
IPC 1
NCRC 1
TxACE 1

1 through 6 of 6 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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2: Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
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3: Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
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4: Selective Germanium Deposition on Silicon and Resulting Structures...
Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB
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5: Selective Germanium Deposition on Silicon and Resulting Structures...
Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5089872 Country: United States Status: Filed on 27-Apr-1990, Issued on ...
URL: https://www.src.org/library/patent/p0101/
Modified: 1992-02-18 - 22KB
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6: Deposition of Germanium Thin Films on Silicon Dioxide Employing...
Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB
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1 through 6 of 6 similar documents, best matches first.