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1 through 7 of 7 similar documents, best matches first.

1: Semiconductor Research Corporation - SRC: GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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2: Synthesis and Characterization of First Row Transition Metal...: Synthesis and Characterization of First Row Transition Metal Complexes Containing a-Imino Alkoxide as Precursors for Deposition of Metal Films Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1373/
Modified: 2017-09-12 - 22KB
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3: Synthesis and Characterization of First Row Transition Metal...: Synthesis and Characterization of First Row Transition Metal Complexes Containing Alpha-Keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition ...
URL: https://www.src.org/library/patent/p1356/
Modified: 2015-12-09 - 22KB
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4: Polyelectrolyte Nanolayers as Diffusion Barriers In Semiconductor...: Polyelectrolyte Nanolayers as Diffusion Barriers In Semiconductor Devices Application Type: Utility Patent Number: 7081674 Country: United States Status: Filed on 11-Jun-2004, ...
URL: https://www.src.org/library/patent/p0466/
Modified: 2006-07-25 - 22KB
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5: Wafer Fabrication Monitoring/Control System and Method (Patent...: Wafer Fabrication Monitoring/Control System and Method Application Type: Utility Patent Number: 9366601 Country: United States Status: Filed on 15-Mar-2012, Issued on 14-Jun-2016 ...
URL: https://www.src.org/library/patent/p1332/
Modified: 2016-06-14 - 23KB
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6: Growth of Inorganic Thin Films using Self-Assembled Monolayers...: Growth of Inorganic Thin Films using Self-Assembled Monolayers as Nucleation Sites Application Type: Utility Patent Number: 7829150 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1139/
Modified: 2010-11-09 - 22KB
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7: Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit...: Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit Devices Application Type: Utility Patent Number: 7144803 Country: United States Status: Filed on 16-Apr-2004, ...
URL: https://www.src.org/library/patent/p0451/
Modified: 2006-12-05 - 22KB
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1 through 7 of 7 similar documents, best matches first.