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1 through 7 of 7 similar documents, best matches first.

1: Semiconductor Research Corporation - SRC: GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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2: Methods of Fabricating Strained Semiconductor-On-Insulator Field...: Methods of Fabricating Strained Semiconductor-On-Insulator Field-Effect Transistors And Related Devices Application Type: Utility Patent Number: 7211458 Country: United States ...
URL: https://www.src.org/library/patent/p0523/
Modified: 2007-05-01 - 22KB
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3: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB
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4: Method for In-Situ Dry Cleaning, Passivation, Functionalization...: Method for In-Situ Dry Cleaning, Passivation, Functionalization of SI-GE Semiconductor Surfaces Application Type: Utility Patent Number: 9818599 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1429/
Modified: 2017-11-14 - 25KB
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5: Method for in-SITU Dry Cleaning, Passivation, and Functionalization...: Method for in-SITU Dry Cleaning, Passivation, and Functionalization of GE Semiconductor Surfaces Application Type: Utility Patent Number: 9117653 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1477/
Modified: 2015-08-25 - 25KB
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6: Method for Cleaning, Passivation and Functionalization of SI...: Method for Cleaning, Passivation and Functionalization of SI-GE Semiconductor Sufraces Application Type: Divisional Patent Number: 10483097 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1734/
Modified: 2019-11-19 - 25KB
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7: High Capacitance Density Gate Dielectrics for III-V Semiconductor...: High Capacitance Density Gate Dielectrics for III-V Semiconductor Channels Using a Pre-Disposition Surface Treatment Involving Plasma and Ti Precursor Exposure Application Type: ...
URL: https://www.src.org/library/patent/p1506/
Modified: 2015-11-17 - 22KB
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1 through 7 of 7 similar documents, best matches first.