Search: infield%3Aenc%3AdnavConType%3DPublications

Doping Technologies

Content Type

Patent Filings	6
Other	1

SRC Program

Center

GRC Science Area

MBP – Materials & Bulk Processes...	7
MIC – Microstructure Sciences	6
PID – Process Integration & Devi...	6
NMS – Nanomanufacturing Sciences	4
DS – Device Sciences	3
MFGPS – Manufacturing Process Sc...	2
MPS – Material & Process Science...	2
CADTS – Computer Aided Design & ...	1
CSR – Cross-disciplinary Semicon...	1
DES – Design Sciences	1
ES-H – Environmental Safety & He...	1
FAC – Factory Sciences	1
GEN – General	1
ICSS – Integrated Circuit & Syst...	1
INT – Interconnect Sciences	1
IPS – Interconnect & Packaging S...	1
ISA – Industrial Support Activit...	1
LIT – Lithography Sciences	1
MFG – Manufacturing Sciences	1
MSS – Manufacturing Systems Scie...	1
NIS – Nanostructure & Integratio...	1
PKG – Packaging Sciences	1
SMS – Semiconductor Modeling & S...	1
SRCEA – SRC Education Alliance	1
TT – Technology Transfer	1

1 through 7 of 7 similar documents, best matches first.

1: Semiconductor Research Corporation - SRC: GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
Find Similar Documents

2: Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...: Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
Find Similar Documents

3: Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge...: Three-Zone Rapid Thermal Processing System Utilizing Wafer Edge Heating Means Application Type: Utility Patent Number: 5418885 Country: United States Status: Filed on 29-Dec-1992, ...
URL: https://www.src.org/library/patent/p0040/
Modified: 1995-05-23 - 22KB
Find Similar Documents

4: Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC: Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
Find Similar Documents

5: Selective Germanium Deposition on Silicon and Resulting Structures...: Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB
Find Similar Documents

6: Selective Germanium Deposition on Silicon and Resulting Structures...: Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5089872 Country: United States Status: Filed on 27-Apr-1990, Issued on ...
URL: https://www.src.org/library/patent/p0101/
Modified: 1992-02-18 - 22KB
Find Similar Documents

7: Deposition of Germanium Thin Films on Silicon Dioxide Employing...: Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB
Find Similar Documents

1 through 7 of 7 similar documents, best matches first.