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- 241:
 Microsoft Word - ITRSpaperfinal.doc
- Transport metrology for ultra-scaled MOSFETs G.C. Tettamanzi 1,* , G.P. Lansbergen 1 , J. Verduijn 1 , R. Rahman 2 , A. Paul 2 , S. Lee 2 N. Collaert 3 , S. Biesemans 3 , G. ...
URL: https://www.src.org/...004100-09-executive-summary-rogge.pdf
Modified: 2010-11-09 - 356KB
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- 242:
E003932 - Variability Forum - Nowka
- Test Structures for Variability Characterization Kevin Nowka IBM Research - Austin nowka@us.ibm.com IBM Research Worldwide Watson Almaden Zurich Beijing Haifa Austin Tokyo Delhi ...
URL: https://www.src.org/calendar/e003932/e003932_s1_3_nowka.pdf
Modified: 2010-06-29 - 1.4MB
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- 243:
E003676 - Memory Forum - Memory Cell Selection Device Enabling...
- Stanford University Memory Cell Selection Device Enabling High Density Device Enabling High Density Memory H S Philip Wong H.-S. Philip Wong Professor of Electrical Engineering ...
URL: https://www.src.org/calendar/e003676/wong.pdf
Modified: 2010-07-29 - 1.1MB
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- 244:
Bioelectronics Overview Part II
- Bioelectronics Roundtable * November 4, 2008 Bioelectronics Overview Part II Department of Chemistry, Department of Biomedical Engineering, Carolina Center for Genome Sciences, and ...
URL: https://www.src.org/calendar/e003426/ramsey.pdf
Modified: 2010-06-21 - 2.8MB
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- 245:
Slide 1
- 230 250 270 290 310 0 0 0 0 0 0 0 0 1 2 240 260 280 300 V G (mV) V G (mV) I (nA) V SD = - 30 mV The absence of steps the sequential nature coupling of the atom. Figure 4b shows ...
URL: https://www.src.org/calendar/e004100/e004100-00-session3.pdf
Modified: 2010-11-29 - 29.2MB
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