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GRC Science Area
MPS – Material & Process Sciences
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- 1:
Multiple Copper Vias for Intergrated Circuit Metallization (Patent...
- Multiple Copper Vias for Intergrated Circuit Metallization Application Type: Continuation Patent Number: 7078817 Country: United States Status: Filed on 13-Dec-2004, Issued on ...
URL: https://www.src.org/library/patent/p0521/
Modified: 2006-07-18 - 22KB
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- 2:
Multiple Copper Vias for Integrated Circuit Metallization and...
- Multiple Copper Vias for Integrated Circuit Metallization and Methods of Fabricating Same Application Type: Utility Patent Number: 6919639 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0268/
Modified: 2005-07-19 - 22KB
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- 3:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB
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- 4:
Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit...
- Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit Devices Application Type: Utility Patent Number: 7144803 Country: United States Status: Filed on 16-Apr-2004, ...
URL: https://www.src.org/library/patent/p0451/
Modified: 2006-12-05 - 22KB
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- 5:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB
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- 6:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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